Abstract
We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.
Original language | English |
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Pages (from-to) | 2275-2277 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 3 B |
DOIs | |
Publication status | Published - 2006 Mar 27 |
Keywords
- Atomic force microscopy
- Scanning tunneling microscopy
- Semiconducting wire
- Sol-gel synthesis
- Vo nanowire
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy