Structural studies of v2O5 nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope

Yong Kwan Kim; Sung Joon Park; Hyeong Dong Lee; Gyu Tae Kim; H. A. Jeong Sook

doi:10.1143/JJAP.45.2275

Structural studies of v₂O₅ nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope

Yong Kwan Kim, Sung Joon Park, Hyeong Dong Lee, Gyu Tae Kim, H. A. Jeong Sook

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have investigated the structures and electronic properties of vanadium pentoxide (V₂O₅) nanowires synthesized by a solgel process. The time-dependent evolution of the V₂O₅ nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V₂O₅ nanowires with a cross section of 10 times; 1.5 nm², whose length varied with the duration time in sol, were synthesized. The V₂O₅ nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V₂O ₅ nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V₂O₅ double-layer structure.

Original language	English
Pages (from-to)	2275-2277
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	3 B
DOIs	https://doi.org/10.1143/JJAP.45.2275
Publication status	Published - 2006 Mar 27

Keywords

Atomic force microscopy
Scanning tunneling microscopy
Semiconducting wire
Sol-gel synthesis
Vo nanowire

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.2275

Cite this

Structural studies of v₂O₅ nanowires by ultrahigh vacuum-scanning tunneling microscope and atomic force microscope. / Kim, Yong Kwan; Park, Sung Joon; Lee, Hyeong Dong et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 3 B, 27.03.2006, p. 2275-2277.

Research output: Contribution to journal › Article › peer-review

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abstract = "We have investigated the structures and electronic properties of vanadium pentoxide (V2O5) nanowires synthesized by a solgel process. The time-dependent evolution of the V2O5 nanowires at different temperatures was systematically studied by atomic force microscopy. The structural dimension and the current-voltage (I-V) characteristics were measured by scanning tunneling microscopy/spectroscopy. V2O5 nanowires with a cross section of 10 times; 1.5 nm2, whose length varied with the duration time in sol, were synthesized. The V2O5 nanowires adsorbed on a self-assembled monolayer of aminothiophenol (ATP) on a Au(111)/mica substrate showed semiconducting I-V characteristics. The height of the V2O 5 nanowires decreased from 1.5 to 0.8 nm with prolonged annealing at temperatures above 100°C, implying the existence of a water interlayer in the V2O5 double-layer structure.",

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