Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

In Tae Bae; Tae Yeon Seong; Young Ju Park; Eun Kyu Kim

doi:10.1007/s11664-999-0212-x

Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

In Tae Bae, Tae Yeon Seong, Young Ju Park, Eun Kyu Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

Original language	English
Pages (from-to)	873-877
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	7
DOIs	https://doi.org/10.1007/s11664-999-0212-x
Publication status	Published - 1999 Jul
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0212-x

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title = "Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy",

abstract = "Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.",

author = "Bae, {In Tae} and Seong, {Tae Yeon} and Park, {Young Ju} and Kim, {Eun Kyu}",

year = "1999",

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language = "English",

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T1 - Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

AU - Bae, In Tae

AU - Seong, Tae Yeon

AU - Park, Young Ju

AU - Kim, Eun Kyu

PY - 1999/7

Y1 - 1999/7

N2 - Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

AB - Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from approx. 5°C to approx. 35°C regarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

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Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

Abstract

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