TY - JOUR
T1 - Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy
AU - Seong, Tae Yeon
AU - Bae, In Tae
AU - Zhao, Y.
AU - Tu, C. W.
PY - 1999
Y1 - 1999
N2 - Transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed to investigate microstructural properties of gas source molecular beam epitaxial GaN(As,P) layers grown on (0001) GaN/sapphire at temperatures in the range 500 - 760°C. As for the GaNAs, we report the observation of ordering with a space group P3m1 in the layer grown at 730°C. The layers grown at temperatures below 600°C are polycrystalline, whist the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc-blende phase to a wurtzite phase, as the growth temperature increases. As for the GaNP, it is shown that the layers grown at temperatures ≤ 600°C experience phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the layers grown at temperatures ≥ 730 °C are found to be binary zinc-blende GaN(P) single crystalline materials. The layers grown at temperatures ≥ 730°C consist of two types of micro-domains, i.e., GaN(P)I and GaN(P)II; the former having twin relation to the latter.
AB - Transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed to investigate microstructural properties of gas source molecular beam epitaxial GaN(As,P) layers grown on (0001) GaN/sapphire at temperatures in the range 500 - 760°C. As for the GaNAs, we report the observation of ordering with a space group P3m1 in the layer grown at 730°C. The layers grown at temperatures below 600°C are polycrystalline, whist the 730°C GaNAs layer has epitaxial relation to the GaN substrate. It is also shown that the GaNAs layers experience a structural change from a zinc-blende phase to a wurtzite phase, as the growth temperature increases. As for the GaNP, it is shown that the layers grown at temperatures ≤ 600°C experience phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the layers grown at temperatures ≥ 730 °C are found to be binary zinc-blende GaN(P) single crystalline materials. The layers grown at temperatures ≥ 730°C consist of two types of micro-domains, i.e., GaN(P)I and GaN(P)II; the former having twin relation to the latter.
UR - http://www.scopus.com/inward/record.url?scp=3442888640&partnerID=8YFLogxK
U2 - 10.1557/s1092578300002404
DO - 10.1557/s1092578300002404
M3 - Article
AN - SCOPUS:3442888640
SN - 1092-5783
VL - 4
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
IS - SUPPL. 1
ER -