Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy

Chemical Compounds

• Molecular Beam Epitaxy 66%
• Molecular Beam 55%
• Electron Diffraction 47%
• Polycrystalline Solid 41%
• Phase Separation 40%
• Space Group 34%
• Electron Particle 24%
• Gas 24%
• Mixture 20%

Engineering & Materials Science

• Gas source molecular beam epitaxy 100%
• Zinc 29%
• Temperature 18%
• Molecular beams 16%
• Growth temperature 14%
• Epitaxial films 14%
• Sapphire 12%
• Electron diffraction 12%
• Phase separation 11%
• Crystalline materials 9%
• Electron microscopes 8%
• Substrates 6%
• Gases 5%

Physics & Astronomy

• molecular beam epitaxy 39%
• gases 23%
• zinc 15%
• temperature 10%
• molecular beams 5%
• wurtzite 5%
• electron diffraction 4%
• sapphire 4%
• examination 4%
• electron microscopes 4%