Abstract
BaTi4O9 thin films were grown on a Pt/Ti/SiO 2/Si substrate using rf magnetron sputtering and the structure of the thin films were then investigated. For the films grown at low temperature (≤350°C), an amorphous phase was formed during the deposition, which then changed to the BaTi5O11 phase when the annealing was conducted below 950°C. However, when the annealing temperature was higher than 950°C, a BaTi4O9 phase was formed. On the contrary, for the films grown at high temperature (>450°C), small BaTi4O9 grains were formed during the deposition, which grew during the annealing. The homogeneous BaTi4O9 thin films were successfully grown on Pt/Ti/SiO2/Si substrate when they were deposited at 550°C and subsequently rapid thermal annealed at 900°C for 3 min.
Original language | English |
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Pages (from-to) | 1209-1212 |
Number of pages | 4 |
Journal | Journal of the American Ceramic Society |
Volume | 88 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2005 May |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry