Structure and dielectric properties of cubic Bi2(Zn 1/3Ta2/3)2 O7 thin films

Jun Hong Noh; Hee Beom Hong; Jung Kun Lee; Chin Moo Cho; Jin Young Kim; Sangwook Lee; In Sun Cho; Hyun Suk Jung; Kug Sun Hong

doi:10.1063/1.3246807

Structure and dielectric properties of cubic Bi₂(Zn _1/3Ta_2/3)₂ O₇ thin films

Jun Hong Noh, Hee Beom Hong, Jung Kun Lee, Chin Moo Cho, Jin Young Kim, Sangwook Lee, In Sun Cho, Hyun Suk Jung, Kug Sun Hong

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Pyrochlore Bi₂(Zn_1/3Ta_2/3)₂ O₇ (BZT) films were prepared by pulsed laser deposition on Pt/TiO₂/SiO₂/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.

Original language	English
Article number	084103
Journal	Journal of Applied Physics
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.3246807
Publication status	Published - 2009
Externally published	Yes

Bibliographical note

Funding Information:
The Pittsburgh portion is supported through Central Research Development Fund by the University of Pittsburgh. This work is also partially supported by WCU (World Class University) program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0). H. S. Jung acknowledges the support by Nano R&D program through the National Research Foundation of Korea funded by MEST (2009-0082659) and the research program 2009 of Kookmin University in Korea.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3246807

Cite this

@article{0ad49bbef1924ebb87b0c8dd3af8d46f,

title = "Structure and dielectric properties of cubic Bi2(Zn 1/3Ta2/3)2 O7 thin films",

abstract = "Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.",

author = "Noh, {Jun Hong} and Hong, {Hee Beom} and Lee, {Jung Kun} and Cho, {Chin Moo} and Kim, {Jin Young} and Sangwook Lee and Cho, {In Sun} and Jung, {Hyun Suk} and Hong, {Kug Sun}",

note = "Funding Information: The Pittsburgh portion is supported through Central Research Development Fund by the University of Pittsburgh. This work is also partially supported by WCU (World Class University) program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0). H. S. Jung acknowledges the support by Nano R&D program through the National Research Foundation of Korea funded by MEST (2009-0082659) and the research program 2009 of Kookmin University in Korea.",

year = "2009",

doi = "10.1063/1.3246807",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Structure and dielectric properties of cubic Bi2(Zn 1/3Ta2/3)2 O7 thin films

AU - Noh, Jun Hong

AU - Hong, Hee Beom

AU - Lee, Jung Kun

AU - Cho, Chin Moo

AU - Kim, Jin Young

AU - Lee, Sangwook

AU - Cho, In Sun

AU - Jung, Hyun Suk

AU - Hong, Kug Sun

N1 - Funding Information: The Pittsburgh portion is supported through Central Research Development Fund by the University of Pittsburgh. This work is also partially supported by WCU (World Class University) program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0). H. S. Jung acknowledges the support by Nano R&D program through the National Research Foundation of Korea funded by MEST (2009-0082659) and the research program 2009 of Kookmin University in Korea.

PY - 2009

Y1 - 2009

N2 - Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.

AB - Pyrochlore Bi2(Zn1/3Ta2/3)2 O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [ε∼177, temperature coefficient of capacitance (TCC) ∼-170 ppm/°C] are much different from those of monoclinic BZT ceramics (ε∼61, TCC ∼+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.

UR - http://www.scopus.com/inward/record.url?scp=70350704482&partnerID=8YFLogxK

U2 - 10.1063/1.3246807

DO - 10.1063/1.3246807

M3 - Article

AN - SCOPUS:70350704482

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 084103

ER -