TY - JOUR
T1 - Structured BiVO4Photoanode Fabricated via Sputtering for Large Areas and Enhanced Photoelectrochemical Performance
AU - Ju, Sucheol
AU - Jun, Junho
AU - Son, Soomin
AU - Park, Jaemin
AU - Lim, Hangyu
AU - Kim, Wonjoong
AU - Chae, Dongwoo
AU - Lee, Heon
N1 - Funding Information:
This research was supported by the International Research & Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant number: 2019K1A47A02113032), Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (NRF-2018M3D1A1058972), the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2C3006382).
Publisher Copyright:
©
PY - 2020/12/14
Y1 - 2020/12/14
N2 - Bismuth vanadate (BiVO4) is a promising photoanode material; however, its efficiency significantly changes depending on the atomic ratio of Bi/V, and there is no suitable method for synthesizing large-area photoanodes. In this study, an efficient BiVO4 photoanode was fabricated via sputtering, by manipulating the molar ratio of Bi/V with V solution annealing. V solution annealing not only adjusted the atomic ratio of Bi/V but also increased the number of O vacancies, thereby improving the charge-separation and charge-transport efficiencies. Consequently, the photocurrent density of the sputtered photoanode with V solution annealing (BVO-V) was 1.86 mA/cm2, which is 23 times higher than that of the sputtered photoanode annealed under air conditions (BVO-A, 81.0 μA/cm2). Furthermore, microcone-patterned fluorine-doped SnO2 was fabricated to increase the active area and reduce the high reflectance, owing to the dense deposition because of the sputtering. Thus, the photocurrent density of the MC-BVO was 3.11 mA/cm2, which is approximately 67% higher than that of BVO-V (1.86 mA/cm2).
AB - Bismuth vanadate (BiVO4) is a promising photoanode material; however, its efficiency significantly changes depending on the atomic ratio of Bi/V, and there is no suitable method for synthesizing large-area photoanodes. In this study, an efficient BiVO4 photoanode was fabricated via sputtering, by manipulating the molar ratio of Bi/V with V solution annealing. V solution annealing not only adjusted the atomic ratio of Bi/V but also increased the number of O vacancies, thereby improving the charge-separation and charge-transport efficiencies. Consequently, the photocurrent density of the sputtered photoanode with V solution annealing (BVO-V) was 1.86 mA/cm2, which is 23 times higher than that of the sputtered photoanode annealed under air conditions (BVO-A, 81.0 μA/cm2). Furthermore, microcone-patterned fluorine-doped SnO2 was fabricated to increase the active area and reduce the high reflectance, owing to the dense deposition because of the sputtering. Thus, the photocurrent density of the MC-BVO was 3.11 mA/cm2, which is approximately 67% higher than that of BVO-V (1.86 mA/cm2).
KW - BiVOsputtering
KW - direct printing
KW - patterned FTO
KW - PEC water splitting
KW - V solution annealing
UR - http://www.scopus.com/inward/record.url?scp=85097884927&partnerID=8YFLogxK
U2 - 10.1021/acssuschemeng.0c05225
DO - 10.1021/acssuschemeng.0c05225
M3 - Article
AN - SCOPUS:85097884927
SN - 2168-0485
VL - 8
SP - 17923
EP - 17932
JO - ACS Sustainable Chemistry and Engineering
JF - ACS Sustainable Chemistry and Engineering
IS - 49
ER -