Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; E. B. Yakimov; S. A. Tarelkin; A. V. Turutin; I. V. Shemerov; S. J. Pearton

doi:10.1063/1.4952734

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, E. B. Yakimov, S. A. Tarelkin, A. V. Turutin, I. V. Shemerov, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near E_c-0.56 eV in limiting the lifetime and diffusion length values in all these materials.

Original language	English
Article number	205109
Journal	Journal of Applied Physics
Volume	119
Issue number	20
DOIs	https://doi.org/10.1063/1.4952734
Publication status	Published - 2016 May 28
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

ASJC Scopus subject areas

General Physics and Astronomy

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@article{05dc0a796f454b13913e3b5dfc5cba05,

title = "Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN",

abstract = "A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near Ec-0.56 eV in limiting the lifetime and diffusion length values in all these materials.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Yakimov, {E. B.} and Tarelkin, {S. A.} and Turutin, {A. V.} and Shemerov, {I. V.} and Pearton, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = may,

day = "28",

doi = "10.1063/1.4952734",

language = "English",

volume = "119",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Yakimov, E. B.

AU - Tarelkin, S. A.

AU - Turutin, A. V.

AU - Shemerov, I. V.

AU - Pearton, S. J.

PY - 2016/5/28

Y1 - 2016/5/28

N2 - A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near Ec-0.56 eV in limiting the lifetime and diffusion length values in all these materials.

AB - A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near Ec-0.56 eV in limiting the lifetime and diffusion length values in all these materials.

UR - http://www.scopus.com/inward/record.url?scp=84971441710&partnerID=8YFLogxK

U2 - 10.1063/1.4952734

DO - 10.1063/1.4952734

M3 - Article

AN - SCOPUS:84971441710

SN - 0021-8979

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 20

M1 - 205109

ER -

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

Abstract

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