Studies of pentacene-based thin film devices produced by cluster beam deposition methods

Jae Kwang Lee; Jung Mo Koo; Sang Yun Lee; Tae Young Choi; J. Joo; Jae Yoo Kim; Jong Ho Choi

doi:10.1016/S0925-3467(02)00181-7

Studies of pentacene-based thin film devices produced by cluster beam deposition methods

Jae Kwang Lee, Jung Mo Koo, Sang Yun Lee, Tae Young Choi, J. Joo, Jae Yoo Kim, Jong Ho Choi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10^-4 cm²/Vs as a lower bound from the J-V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source-drain current modulation behavior with different gate voltage.

Original language	English
Pages (from-to)	451-454
Number of pages	4
Journal	Optical Materials
Volume	21
Issue number	1-3
DOIs	https://doi.org/10.1016/S0925-3467(02)00181-7
Publication status	Published - 2003 Jan

Keywords

Cluster beam deposition
Hole carrier mobility
MOSFETs
Pentacene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Computer Science(all)
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-3467(02)00181-7

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title = "Studies of pentacene-based thin film devices produced by cluster beam deposition methods",

abstract = "The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10-4 cm2/Vs as a lower bound from the J-V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source-drain current modulation behavior with different gate voltage.",

keywords = "Cluster beam deposition, Hole carrier mobility, MOSFETs, Pentacene",

author = "Lee, {Jae Kwang} and Koo, {Jung Mo} and Lee, {Sang Yun} and Choi, {Tae Young} and J. Joo and Kim, {Jae Yoo} and Choi, {Jong Ho}",

note = "Funding Information: Authors wish to thank the support of BK21 fellowships (S.Y. Lee and J.-Y. Kim), KBSI, MOE and instruments from the equipment facility of CRM. This work was supported by grant no. R01-1999-00230 from the Basic Research Program of the KOSEF.",

year = "2003",

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doi = "10.1016/S0925-3467(02)00181-7",

language = "English",

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pages = "451--454",

journal = "Optical Materials",

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T1 - Studies of pentacene-based thin film devices produced by cluster beam deposition methods

AU - Lee, Jae Kwang

AU - Koo, Jung Mo

AU - Lee, Sang Yun

AU - Choi, Tae Young

AU - Joo, J.

AU - Kim, Jae Yoo

AU - Choi, Jong Ho

N1 - Funding Information: Authors wish to thank the support of BK21 fellowships (S.Y. Lee and J.-Y. Kim), KBSI, MOE and instruments from the equipment facility of CRM. This work was supported by grant no. R01-1999-00230 from the Basic Research Program of the KOSEF.

PY - 2003/1

Y1 - 2003/1

N2 - The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10-4 cm2/Vs as a lower bound from the J-V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source-drain current modulation behavior with different gate voltage.

AB - The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10-4 cm2/Vs as a lower bound from the J-V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source-drain current modulation behavior with different gate voltage.

KW - Cluster beam deposition

KW - Hole carrier mobility

KW - MOSFETs

KW - Pentacene

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U2 - 10.1016/S0925-3467(02)00181-7

DO - 10.1016/S0925-3467(02)00181-7

M3 - Article

AN - SCOPUS:0037210820

SN - 0925-3467

VL - 21

SP - 451

EP - 454

JO - Optical Materials

JF - Optical Materials

IS - 1-3

ER -

Studies of pentacene-based thin film devices produced by cluster beam deposition methods

Abstract

Keywords

ASJC Scopus subject areas

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