Studies of pentacene-based thin film devices produced by cluster beam deposition methods

Jae Kwang Lee, Jung Mo Koo, Sang Yun Lee, Tae Young Choi, J. Joo, Jae Yoo Kim, Jong Ho Choi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10-4 cm2/Vs as a lower bound from the J-V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source-drain current modulation behavior with different gate voltage.

Original languageEnglish
Pages (from-to)451-454
Number of pages4
JournalOptical Materials
Issue number1-3
Publication statusPublished - 2003 Jan

Bibliographical note

Funding Information:
Authors wish to thank the support of BK21 fellowships (S.Y. Lee and J.-Y. Kim), KBSI, MOE and instruments from the equipment facility of CRM. This work was supported by grant no. R01-1999-00230 from the Basic Research Program of the KOSEF.


  • Cluster beam deposition
  • Hole carrier mobility
  • Pentacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Computer Science
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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