The cluster beam deposition (CBD) method has been applied to fabricate and characterize pentacene-based thin film devices. Atomic force microscopy, scanning electron microscopy, and X-ray diffraction measurements demonstrate that the weakly bound and highly directional cluster beam is effective in producing a highly ordered structure close to a single crystal with a uniform flat film surface. The hole carrier mobility has been determined to be approximately 10-4 cm2/Vs as a lower bound from the J-V characteristics for the ITO/pentacene/Al devices. The Schottky barrier-type MOSFETs with a 10 μm long channel length have been produced and show a typical source-drain current modulation behavior with different gate voltage.
Bibliographical noteFunding Information:
Authors wish to thank the support of BK21 fellowships (S.Y. Lee and J.-Y. Kim), KBSI, MOE and instruments from the equipment facility of CRM. This work was supported by grant no. R01-1999-00230 from the Basic Research Program of the KOSEF.
- Cluster beam deposition
- Hole carrier mobility
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Computer Science
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering