Studies of porous silicon field emitters

E. Boswell; T. Y. Seong; P. R. Wilshaw

doi:10.1116/1.587965

Studies of porous silicon field emitters

E. Boswell, T. Y. Seong, P. R. Wilshaw

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

Recent work on field emitters has shown that a thin layer of porous silicon formed on the surface of pyramidal p-type silicon emitters can dramatically improve their emission characteristics, both in terms of the maximum emission current obtained and also the uniformity of emission between different pyramids [Wilshaw and Boswell, J. Vac. Sci. Technol. B 12, 662 (1994)]. A transmission electron microscope (TEM) study of the emitting surface of such pyramids is presented which shows that they are covered with a high density of surface asperities. TEM studies and electrical characterization are presented for two contrasting porous silicon morphologies.

Original language	English
Pages (from-to)	437-440
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	2
DOIs	https://doi.org/10.1116/1.587965
Publication status	Published - 1995 Mar
Externally published	Yes
Event	Proceedings of the 7th International Vacuum Microelectronics Conference - Grenoble, Fr Duration: 1994 Jul 4 → 1994 Jul 7

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.587965

Cite this

@article{2f14ceeb917e45a6ae52acb8f280ad40,

title = "Studies of porous silicon field emitters",

abstract = "Recent work on field emitters has shown that a thin layer of porous silicon formed on the surface of pyramidal p-type silicon emitters can dramatically improve their emission characteristics, both in terms of the maximum emission current obtained and also the uniformity of emission between different pyramids [Wilshaw and Boswell, J. Vac. Sci. Technol. B 12, 662 (1994)]. A transmission electron microscope (TEM) study of the emitting surface of such pyramids is presented which shows that they are covered with a high density of surface asperities. TEM studies and electrical characterization are presented for two contrasting porous silicon morphologies.",

author = "E. Boswell and Seong, {T. Y.} and Wilshaw, {P. R.}",

year = "1995",

month = mar,

doi = "10.1116/1.587965",

language = "English",

volume = "13",

pages = "437--440",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

number = "2",

note = "Proceedings of the 7th International Vacuum Microelectronics Conference ; Conference date: 04-07-1994 Through 07-07-1994",

}

TY - JOUR

T1 - Studies of porous silicon field emitters

AU - Boswell, E.

AU - Seong, T. Y.

AU - Wilshaw, P. R.

PY - 1995/3

Y1 - 1995/3

N2 - Recent work on field emitters has shown that a thin layer of porous silicon formed on the surface of pyramidal p-type silicon emitters can dramatically improve their emission characteristics, both in terms of the maximum emission current obtained and also the uniformity of emission between different pyramids [Wilshaw and Boswell, J. Vac. Sci. Technol. B 12, 662 (1994)]. A transmission electron microscope (TEM) study of the emitting surface of such pyramids is presented which shows that they are covered with a high density of surface asperities. TEM studies and electrical characterization are presented for two contrasting porous silicon morphologies.

AB - Recent work on field emitters has shown that a thin layer of porous silicon formed on the surface of pyramidal p-type silicon emitters can dramatically improve their emission characteristics, both in terms of the maximum emission current obtained and also the uniformity of emission between different pyramids [Wilshaw and Boswell, J. Vac. Sci. Technol. B 12, 662 (1994)]. A transmission electron microscope (TEM) study of the emitting surface of such pyramids is presented which shows that they are covered with a high density of surface asperities. TEM studies and electrical characterization are presented for two contrasting porous silicon morphologies.

UR - http://www.scopus.com/inward/record.url?scp=0029277981&partnerID=8YFLogxK

U2 - 10.1116/1.587965

DO - 10.1116/1.587965

M3 - Conference article

AN - SCOPUS:0029277981

SN - 0734-211X

VL - 13

SP - 437

EP - 440

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

T2 - Proceedings of the 7th International Vacuum Microelectronics Conference

Y2 - 4 July 1994 through 7 July 1994

ER -

Studies of porous silicon field emitters

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this