Study of a-plane GaN epitaxial lateral overgrowth using carbonized photoresist mask on r-plane sapphire

Samseok Jang; Dohan Lee; Jun Hyuck Kwon; Sang Il Kim; So Young Yim; Jaesang Lee; Ji Hun Park; Dongjin Byun

doi:10.1143/JJAP.51.115501

Study of a-plane GaN epitaxial lateral overgrowth using carbonized photoresist mask on r-plane sapphire

Samseok Jang, Dohan Lee, Jun Hyuck Kwon, Sang Il Kim, So Young Yim, Jaesang Lee, Ji Hun Park, Dongjin Byun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (1102) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 12 μm. The stripe-patterned PR was annealed at 1100 °C in a H ₂ atmosphere. The stripes were aligned parallel to the h1100iGaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.

Original language	English
Article number	115501
Journal	Japanese journal of applied physics
Volume	51
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.51.115501
Publication status	Published - 2012 Nov

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Study of a-plane GaN epitaxial lateral overgrowth using carbonized photoresist mask on r-plane sapphire",

abstract = "Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (1102) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 12 μm. The stripe-patterned PR was annealed at 1100 °C in a H 2 atmosphere. The stripes were aligned parallel to the h1100iGaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.",

author = "Samseok Jang and Dohan Lee and Kwon, {Jun Hyuck} and Kim, {Sang Il} and Yim, {So Young} and Jaesang Lee and Park, {Ji Hun} and Dongjin Byun",

year = "2012",

month = nov,

doi = "10.1143/JJAP.51.115501",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

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T1 - Study of a-plane GaN epitaxial lateral overgrowth using carbonized photoresist mask on r-plane sapphire

AU - Jang, Samseok

AU - Lee, Dohan

AU - Kwon, Jun Hyuck

AU - Kim, Sang Il

AU - Yim, So Young

AU - Lee, Jaesang

AU - Park, Ji Hun

AU - Byun, Dongjin

PY - 2012/11

Y1 - 2012/11

N2 - Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (1102) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 12 μm. The stripe-patterned PR was annealed at 1100 °C in a H 2 atmosphere. The stripes were aligned parallel to the h1100iGaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.

AB - Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (1102) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 μm and a period of 12 μm. The stripe-patterned PR was annealed at 1100 °C in a H 2 atmosphere. The stripes were aligned parallel to the h1100iGaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.

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DO - 10.1143/JJAP.51.115501

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SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 11

M1 - 115501

ER -

Study of a-plane GaN epitaxial lateral overgrowth using carbonized photoresist mask on r-plane sapphire

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