Study of chirped quantum dot superluminescent diodes

Il Ki Han; Hyung Cheol Bae; Woon Jo Cho; Jung I.I. Lee; Hong Lee Park; Tae Geun Kim; Joo In Lee

doi:10.1143/JJAP.44.5692

Study of chirped quantum dot superluminescent diodes

Il Ki Han, Hyung Cheol Bae, Woon Jo Cho, Jung I.I. Lee, Hong Lee Park, Tae Geun Kim, Joo In Lee

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a three-stack InAs QD part with a band-gap energy of 0.95 eV and another three-stack InAs QD part with a band-gap energy of 1.03 eV. From the electroluminescence (EL) measurement of SLDs, it was observed that there were two peaks separated by 80 nm. Such separation of the two peaks was consistent with that shown in the photoluminescence curve obtained at room temperature, indicating that the chirped QD characteristics of the active layer are directly reflected on the EL spectra of SLDs. The 3 dB bandwidths of both peaks were measured a 30 nm and 37 nm.

Original language	English
Pages (from-to)	5692-5695
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	7 B
DOIs	https://doi.org/10.1143/JJAP.44.5692
Publication status	Published - 2005 Jul 26

Keywords

Chirped quantum dot
Electroluminescence
Superluminescent diodes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.44.5692

Cite this

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title = "Study of chirped quantum dot superluminescent diodes",

abstract = "Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a three-stack InAs QD part with a band-gap energy of 0.95 eV and another three-stack InAs QD part with a band-gap energy of 1.03 eV. From the electroluminescence (EL) measurement of SLDs, it was observed that there were two peaks separated by 80 nm. Such separation of the two peaks was consistent with that shown in the photoluminescence curve obtained at room temperature, indicating that the chirped QD characteristics of the active layer are directly reflected on the EL spectra of SLDs. The 3 dB bandwidths of both peaks were measured a 30 nm and 37 nm.",

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author = "Han, {Il Ki} and Bae, {Hyung Cheol} and Cho, {Woon Jo} and Lee, {Jung I.I.} and Park, {Hong Lee} and Kim, {Tae Geun} and Lee, {Joo In}",

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T1 - Study of chirped quantum dot superluminescent diodes

AU - Han, Il Ki

AU - Bae, Hyung Cheol

AU - Cho, Woon Jo

AU - Lee, Jung I.I.

AU - Park, Hong Lee

AU - Kim, Tae Geun

AU - Lee, Joo In

PY - 2005/7/26

Y1 - 2005/7/26

N2 - Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a three-stack InAs QD part with a band-gap energy of 0.95 eV and another three-stack InAs QD part with a band-gap energy of 1.03 eV. From the electroluminescence (EL) measurement of SLDs, it was observed that there were two peaks separated by 80 nm. Such separation of the two peaks was consistent with that shown in the photoluminescence curve obtained at room temperature, indicating that the chirped QD characteristics of the active layer are directly reflected on the EL spectra of SLDs. The 3 dB bandwidths of both peaks were measured a 30 nm and 37 nm.

AB - Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a three-stack InAs QD part with a band-gap energy of 0.95 eV and another three-stack InAs QD part with a band-gap energy of 1.03 eV. From the electroluminescence (EL) measurement of SLDs, it was observed that there were two peaks separated by 80 nm. Such separation of the two peaks was consistent with that shown in the photoluminescence curve obtained at room temperature, indicating that the chirped QD characteristics of the active layer are directly reflected on the EL spectra of SLDs. The 3 dB bandwidths of both peaks were measured a 30 nm and 37 nm.

KW - Chirped quantum dot

KW - Electroluminescence

KW - Superluminescent diodes

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IS - 7 B

ER -

Study of chirped quantum dot superluminescent diodes

Abstract

Keywords

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