Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Yuyin Xi; Lu Liu; Ya Hsi Hwang; Oluwadamilola Phillips; Fan Ren; Stephen J. Pearton; Jihyun Kim; Chien Hsing Hsu; Chien Fong Lo; Jerry Wayne Johnson

doi:10.1116/1.4798612

Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Yuyin Xi
, Lu Liu
, Ya Hsi Hwang
, Oluwadamilola Phillips
, Fan Ren
, Stephen J. Pearton
, Jihyun Kim
, Chien Hsing Hsu
, Chien Fong Lo
, Jerry Wayne Johnson

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t₉₀. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

Original language	English
Article number	032202
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4798612
Publication status	Published - 2013 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Xi, Y., Liu, L., Hwang, Y. H., Phillips, O., Ren, F., Pearton, S. J., Kim, J., Hsu, C. H., Lo, C. F., & Wayne Johnson, J. (2013). Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 31(3), Article 032202. https://doi.org/10.1116/1.4798612

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title = "Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure",

abstract = "The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1\% hydrogen by about 60\% as compared to the response time defined as the diode current reaching 90\% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.",

author = "Yuyin Xi and Lu Liu and Hwang, \{Ya Hsi\} and Oluwadamilola Phillips and Fan Ren and Pearton, \{Stephen J.\} and Jihyun Kim and Hsu, \{Chien Hsing\} and Lo, \{Chien Fong\} and \{Wayne Johnson\}, Jerry",

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language = "English",

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journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

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AU - Xi, Yuyin

AU - Liu, Lu

AU - Hwang, Ya Hsi

AU - Phillips, Oluwadamilola

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Jihyun

AU - Hsu, Chien Hsing

AU - Lo, Chien Fong

AU - Wayne Johnson, Jerry

PY - 2013/5

Y1 - 2013/5

N2 - The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

AB - The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.

UR - https://www.scopus.com/pages/publications/84878366033

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DO - 10.1116/1.4798612

M3 - Article

AN - SCOPUS:84878366033

SN - 2166-2746

VL - 31

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 3

M1 - 032202

ER -

Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Abstract

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