Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers

Dongwon Lim; Kisu Kim; Sungdong Kim; Won Young Jeung; Seong Rae Lee

doi:10.1109/TMAG.2009.2018590

Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers

Dongwon Lim, Kisu Kim, Sungdong Kim, Won Young Jeung, Seong Rae Lee

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)_n, should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs.

Original language	English
Article number	4957779
Pages (from-to)	2407-2409
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2009.2018590
Publication status	Published - 2009 Jun

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the Korea Research Foundation (KRF-2004-005-C00068) and the Basic Research Program of the KOSEF (R-01-2005-000-11188-0).

Keywords

Exchange biased
Pd/Co
Perpendicular MTJ

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2009.2018590

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title = "Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers",

abstract = "We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)n, should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs.",

keywords = "Exchange biased, Pd/Co, Perpendicular MTJ",

author = "Dongwon Lim and Kisu Kim and Sungdong Kim and Jeung, {Won Young} and Lee, {Seong Rae}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the Korea Research Foundation (KRF-2004-005-C00068) and the Basic Research Program of the KOSEF (R-01-2005-000-11188-0).",

year = "2009",

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doi = "10.1109/TMAG.2009.2018590",

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AU - Lim, Dongwon

AU - Kim, Kisu

AU - Kim, Sungdong

AU - Jeung, Won Young

AU - Lee, Seong Rae

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the Korea Research Foundation (KRF-2004-005-C00068) and the Basic Research Program of the KOSEF (R-01-2005-000-11188-0).

PY - 2009/6

Y1 - 2009/6

N2 - We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)n, should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs.

AB - We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)n, should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs.

KW - Exchange biased

KW - Pd/Co

KW - Perpendicular MTJ

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U2 - 10.1109/TMAG.2009.2018590

DO - 10.1109/TMAG.2009.2018590

M3 - Article

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SN - 0018-9464

VL - 45

SP - 2407

EP - 2409

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

M1 - 4957779

ER -

Study on exchange-biased perpendicular magnetic tunnel junction based on Pd/Co multilayers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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