Study on hermetic glass sealing using a modified direct bonding method

B. K. Ju; C. G. Ko; Y. H. Lee; I. B. Kang; P. White; N. Samaan; M. Haskard; M. H. Oh

Study on hermetic glass sealing using a modified direct bonding method

B. K. Ju, C. G. Ko, Y. H. Lee, I. B. Kang, P. White, N. Samaan, M. Haskard, M. H. Oh

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm²) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

Original language	English
Pages (from-to)	123-129
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	444
Publication status	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Study on hermetic glass sealing using a modified direct bonding method",

abstract = "This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.",

author = "Ju, {B. K.} and Ko, {C. G.} and Lee, {Y. H.} and Kang, {I. B.} and P. White and N. Samaan and M. Haskard and Oh, {M. H.}",

year = "1997",

language = "English",

volume = "444",

pages = "123--129",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

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TY - JOUR

T1 - Study on hermetic glass sealing using a modified direct bonding method

AU - Ju, B. K.

AU - Ko, C. G.

AU - Lee, Y. H.

AU - Kang, I. B.

AU - White, P.

AU - Samaan, N.

AU - Haskard, M.

AU - Oh, M. H.

PY - 1997

Y1 - 1997

N2 - This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

AB - This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

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M3 - Conference article

AN - SCOPUS:0030705287

SN - 0272-9172

VL - 444

SP - 123

EP - 129

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Study on hermetic glass sealing using a modified direct bonding method

Abstract

ASJC Scopus subject areas

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