Study on hermetic glass sealing using a modified direct bonding method

B. K. Ju, C. G. Ko, Y. H. Lee, I. B. Kang, P. White, N. Samaan, M. Haskard, M. H. Oh

Research output: Contribution to journalConference articlepeer-review


This paper presents the process and experimental results about the improved initial bonding between No.7740 glass and silicon wafers. We employed a modified initial bonding procedure, called by water-enhanced direct bonding(WDB) technique, and could obtain large initially-bonded area(≥ 95% of the whole wafer area) at room temperature and high interface energy (≥ 2,000 erg/cm2) through 250°C post-annealing even though the glass wafer had high surface roughness. The main factors contributing to the wider bonded area and higher interface energy in the developed WDB process could be inferred the increase of chemical species (oxygen and hydroxyl groups) responsible for initial hydrogen bonding and conversion from hydroxyl bonds to siloxane bonds in the temperature range between room temperature and 250°C.

Original languageEnglish
Pages (from-to)123-129
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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