Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

Duchang Heo; Il Ki Han; Jung Il Lee; Jichai Jeong

doi:10.1109/LPT.2004.829772

Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

Duchang Heo, Il Ki Han, Jung Il Lee, Jichai Jeong

Department of Brain and Cognitive Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.

Original language	English
Pages (from-to)	1801-1803
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2004.829772
Publication status	Published - 2004 Aug

Bibliographical note

Funding Information:
Manuscript received January 9, 2004; revised April 3, 2004. This work is supported in part by the Korean Ministry of Science and Technology through the National Research Laboratory (NRL). D. Heo, I. K. Han, and J. I. Lee are with the Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea (e-mail: hikoel@kist.re.kr). J. Jeong is with the Department of Radio Communications Engineering, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/LPT.2004.829772 Fig. 1. (a) Schematic band structure of InGaAs–InGaAsP–InP MQW active layer with two-step SCH (confining–bounding) layer. (b) Doping concentration-depth profile of the structures.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure",

abstract = "We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.",

author = "Duchang Heo and Han, {Il Ki} and Lee, {Jung Il} and Jichai Jeong",

note = "Funding Information: Manuscript received January 9, 2004; revised April 3, 2004. This work is supported in part by the Korean Ministry of Science and Technology through the National Research Laboratory (NRL). D. Heo, I. K. Han, and J. I. Lee are with the Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea (e-mail: hikoel@kist.re.kr). J. Jeong is with the Department of Radio Communications Engineering, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/LPT.2004.829772 Fig. 1. (a) Schematic band structure of InGaAs–InGaAsP–InP MQW active layer with two-step SCH (confining–bounding) layer. (b) Doping concentration-depth profile of the structures.",

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AU - Heo, Duchang

AU - Han, Il Ki

AU - Lee, Jung Il

AU - Jeong, Jichai

N1 - Funding Information: Manuscript received January 9, 2004; revised April 3, 2004. This work is supported in part by the Korean Ministry of Science and Technology through the National Research Laboratory (NRL). D. Heo, I. K. Han, and J. I. Lee are with the Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea (e-mail: hikoel@kist.re.kr). J. Jeong is with the Department of Radio Communications Engineering, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/LPT.2004.829772 Fig. 1. (a) Schematic band structure of InGaAs–InGaAsP–InP MQW active layer with two-step SCH (confining–bounding) layer. (b) Doping concentration-depth profile of the structures.

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N2 - We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.

AB - We studied symmetric and asymmetric InGaAsP-InGaAs 1.55-μm multiquantum-well (MQW) laser diodes (LDs) with highly p-doped layers in the two-step separate confinement heterostructure (SCH). The p-doping in p-SCH suppresses the electron overflow from the MQWs to p-SCH, but it is an origin of free carrier absorption loss. An additional InGaAsP layer inserted inside n-SCH makes asymmetric field distribution and, therefore, reduces the portion of optical field distribution in highly p-doped regions with high optical loss. Compared with symmetric structure, asymmetric SCH LD has low threshold current density, low internal loss, and high and flat slope efficiency with respect to temperature.

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Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

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