Abstract
The photoconductive decay (PCD) method of determining the excess carrier lifetime of HgZnTe and its dependence on surface passivation are studied. The measured value for the lifetime shows good agreement with the summed value for the Auger and Shockley-Read lifetime. By solving a one-dimensional transport equation, the surface recombination velocity is obtained for the different surface passivation state. From these results, the surface activation energy is calculated.
Original language | English |
---|---|
Pages (from-to) | 1247-1252 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 184-185 |
DOIs | |
Publication status | Published - 1998 |
Keywords
- Activation energy
- HgZnTe
- Lifetime
- Passivation
- Photocondutive decay
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry