Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Lu Liu, Ya Hsi Hwang, Yuyin Xi, Fan Ren, Valentin Craciun, Stephen J. Pearton, Gwangseok Yang, Hong Yeol Kim, Jihyun Kim

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20 Citations (Scopus)

Abstract

The effects of proton irradiation dose on the dc characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with source field plates were studied. The HEMTs were irradiated with various protons doses ranging from 5×1012 to 5×1015cm-2 at a fixed energy of 5 MeV. HEMTs irradiated with proton dose below 5×10 13cm-2 showed less than 2% degradation of either saturation drain current (IDSS) or transconductance (gm). Significant changes of these parameters were observed for the devices irradiated with doses above 5×1013cm-2. HEMTs irradiated with the highest proton dose of 5×1015cm-2 showed a reduction of IDSS and gm of 86% and 64.7%, and a positive Vth shift of 0.84V, respectively. Despite the significant I DSS and gm reductions, the off-state drain breakdown voltage (VBR) was improved more than five times at this particular irradiation condition. The significant improvement of off-state drain breakdown voltage was attributed to the formation of a virtual gate at drain side of gate edge, which was the result of the generation of defect centers at AlGaN/GaN interface.

Original languageEnglish
Article number022202
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number2
DOIs
Publication statusPublished - 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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