Abstract
The effects of proton irradiation dose on the dc characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with source field plates were studied. The HEMTs were irradiated with various protons doses ranging from 5×1012 to 5×1015cm-2 at a fixed energy of 5 MeV. HEMTs irradiated with proton dose below 5×10 13cm-2 showed less than 2% degradation of either saturation drain current (IDSS) or transconductance (gm). Significant changes of these parameters were observed for the devices irradiated with doses above 5×1013cm-2. HEMTs irradiated with the highest proton dose of 5×1015cm-2 showed a reduction of IDSS and gm of 86% and 64.7%, and a positive Vth shift of 0.84V, respectively. Despite the significant I DSS and gm reductions, the off-state drain breakdown voltage (VBR) was improved more than five times at this particular irradiation condition. The significant improvement of off-state drain breakdown voltage was attributed to the formation of a virtual gate at drain side of gate edge, which was the result of the generation of defect centers at AlGaN/GaN interface.
Original language | English |
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Article number | 022202 |
Journal | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
Volume | 32 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2014 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry