Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

Hyun Seok Lee; Man Young Sung

Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

Hyun Seok Lee^*
, Man Young Sung

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The dielectric properties of Ba_0.65Sr_0.35TiO₃(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1 μm have been successfully grown on a Si (100) substrate at 400 °C using the electron beam assisted ICBE system with a plasma O₂ source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500 angstroms deposited at a substrate temperature of 400 °C has a dielectric constant of 1191 and a leakage current of about 2.37×10^-9 A/cm². This shows the BST film can be applied to dielectrics of ULSI capacitors.

Original language	English
Pages (from-to)	63-68
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	441
Publication status	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{ef685b95b9e346b6920e1072898fec2d,

title = "Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication",

abstract = "The dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1 μm have been successfully grown on a Si (100) substrate at 400 °C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500 angstroms deposited at a substrate temperature of 400 °C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.",

author = "Lee, \{Hyun Seok\} and Sung, \{Man Young\}",

year = "1997",

language = "English",

volume = "441",

pages = "63--68",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

AU - Lee, Hyun Seok

AU - Sung, Man Young

PY - 1997

Y1 - 1997

N2 - The dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1 μm have been successfully grown on a Si (100) substrate at 400 °C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500 angstroms deposited at a substrate temperature of 400 °C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

AB - The dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1 μm have been successfully grown on a Si (100) substrate at 400 °C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500 angstroms deposited at a substrate temperature of 400 °C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

UR - https://www.scopus.com/pages/publications/0030692298

M3 - Conference article

AN - SCOPUS:0030692298

SN - 0272-9172

VL - 441

SP - 63

EP - 68

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Study on the growth of a ferroelectric thin film using ionized cluster beam epitaxy technique and the application for ULSI fabrication

Abstract

ASJC Scopus subject areas

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