Abstract
Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 approx. 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 approx. 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about -8×10-3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of -4×10-3 and large strain relaxation of 50%.
Original language | English |
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Pages (from-to) | 319-324 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 356 |
Publication status | Published - 1995 |
Externally published | Yes |
Event | Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 1994 Nov 28 → 1994 Dec 1 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering