Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE

Kyoung Ik Cho, Sahn Nahm, Sang Gi Kim, Seung Chang Lee, Kyung Soo Kim, Sin Chong Park

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 approx. 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 approx. 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about -8×10-3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of -4×10-3 and large strain relaxation of 50%.

Original languageEnglish
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 1994 Nov 281994 Dec 1

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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