Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE

Kyoung Ik Cho; Sahn Nahm; Sang Gi Kim; Seung Chang Lee; Kyung Soo Kim; Sin Chong Park

Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE

Kyoung Ik Cho, Sahn Nahm, Sang Gi Kim, Seung Chang Lee, Kyung Soo Kim, Sin Chong Park

Research output: Contribution to journal › Conference article › peer-review

Abstract

Si/Si_0.8Ge_0.2/Si(001) structures were grown at various growth temperatures (250 approx. 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 approx. 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about -8×10^-3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of -4×10^-3 and large strain relaxation of 50%.

Original language	English
Pages (from-to)	319-324
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	356
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 1994 Nov 28 → 1994 Dec 1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{7337daa6d4ad42af84d431f7e9bcb174,

title = "Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE",

abstract = "Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 approx. 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 approx. 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about -8×10-3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of -4×10-3 and large strain relaxation of 50%.",

author = "Cho, {Kyoung Ik} and Sahn Nahm and Kim, {Sang Gi} and Lee, {Seung Chang} and Kim, {Kyung Soo} and Park, {Sin Chong}",

year = "1995",

language = "English",

volume = "356",

pages = "319--324",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 01-12-1994",

}

TY - JOUR

T1 - Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE

AU - Cho, Kyoung Ik

AU - Nahm, Sahn

AU - Kim, Sang Gi

AU - Lee, Seung Chang

AU - Kim, Kyung Soo

AU - Park, Sin Chong

PY - 1995

Y1 - 1995

N2 - Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 approx. 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 approx. 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about -8×10-3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of -4×10-3 and large strain relaxation of 50%.

AB - Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 approx. 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 approx. 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about -8×10-3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of -4×10-3 and large strain relaxation of 50%.

UR - http://www.scopus.com/inward/record.url?scp=0029224729&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029224729

SN - 0272-9172

VL - 356

SP - 319

EP - 324

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 1 December 1994

ER -

Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE

Abstract

ASJC Scopus subject areas

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