Study on the strain and microstructure in SiGe film grown on Si (001) substrate by MBE

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Substrates 45%
• Microstructure 43%
• Strain relaxation 36%
• Growth temperature 34%
• Crystalline materials 33%
• Stacking faults 15%
• X ray diffraction analysis 13%
• Crystallinity 13%
• Transmission electron microscopy 11%
• Crystals 10%
• Defects 7%

Chemical Compounds

• Strain 45%
• Microstructure 43%
• Liquid Film 31%
• Amorphous Material 22%
• Molecular Beam Epitaxy 15%
• Stacking Fault 14%
• X-Ray Diffractometry 11%
• Crystallinity 8%
• Transmission Electron Microscopy 7%
• Amount 4%

Physics & Astronomy

• microstructure 37%
• plains 12%
• plane strain 11%
• crystal defects 10%
• crystallinity 9%
• molecular beam epitaxy 9%
• transmission electron microscopy 7%
• temperature 6%
• defects 5%
• crystals 5%
• x rays 4%