Sub-5 nm nanostructures fabricated by atomic layer deposition using a carbon nanotube template

Ju Yeon Woo, Hyo Han, Ji Weon Kim, Seung Mo Lee, Jeong Sook Ha, Joon Hyung Shim, Chang Soo Han

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The fabrication of nanostructures having diameters of sub-5 nm is very a important issue for bottom-up nanofabrication of nanoscale devices. In this work, we report a highly controllable method to create sub-5 nm nano-trenches and nanowires by combining area-selective atomic layer deposition (ALD) with single-walled carbon nanotubes (SWNTs) as templates. Alumina nano-trenches having a depth of 2.6 ∼ 3.0 nm and SiO2 nano-trenches having a depth of 1.9 ∼ 2.2 nm fully guided by the SWNTs have been formed on SiO2/Si substrate. Through infilling ZnO material by ALD in alumina nano-trenches, well-defined ZnO nanowires having a thickness of 3.1 ∼ 3.3 nm have been fabricated. In order to improve the electrical properties of ZnO nanowires, as-fabricated ZnO nanowires by ALD were annealed at 350 °C in air for 60 min. As a result, we successfully demonstrated that as-synthesized ZnO nanowire using a specific template can be made for various high-density resistive components in the nanoelectronics industry.

Original languageEnglish
Article number265301
JournalNanotechnology
Volume27
Issue number26
DOIs
Publication statusPublished - 2016 May 18

Bibliographical note

Funding Information:
This work was supported by Center for Advanced Soft Electronics (2011-0031635) and Basic Science Research Program (2015-01005931) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning.

Publisher Copyright:
© 2016 IOP Publishing Ltd.

Keywords

  • ZnO nanowire
  • atomic layer deposition
  • carbon nanotube
  • nanopatterning
  • sub-5 nm

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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