Sub 50 nm nano-patterns with carbon based spin-on organic hardmask

Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was co tompared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosi ize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si ₃N ₄ layer. However, such a nano-structure was able to be formed by etching the Si ₃N ₄ layer using C-SOH as an etch mask.