Substrate and layout engineering to suppress self-heating in floating body transistors

S. H. Shin, S. H. Kim, S. Kim, H. Wu, P. D. Ye, M. A. Alam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)


Self-heating (SH) has emerged as an important performance, variability, and reliability concern for floating body transistors (FB-FET), namely, extremely-thin-silicon-on-insulator (ETSOI), SOI-FinFET, gate-all-round NW-FET (GAA-FETs), etc. The floating body topology offers electrostatic control, but restricts heat outflow: apparently an intrinsic trade-off. In this paper, we trace the trajectory of heat flow in a broad range of transistors to show that the trade-off is not fundamental, and self-heating can be suppressed by novel device designs that ease thermal bottlenecks. Towards this goal, we (i) characterize SH in various FB-FETs with different channel materials (Si, Ge, InGaAs) by submicron thermo-reflectance imaging; (ii) identify universal features and common thermal bottlenecks across various transistor technologies, (iii) offer novel, technology-aware device design to ease the bottlenecks and reduce self-heating, and (iv) experimentally demonstrate the effectiveness of these strategies in suppressing self-heating. We conclude that thermal aware transistor design can suppress self-heating without compromising performance and electrostatic control of the transistor.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509039012
Publication statusPublished - 2017 Jan 31
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Other62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/TerritoryUnited States
CitySan Francisco

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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