Substrate-bias assisted hot electron injection method for high-speed, low-voltage, and multi-bit flash memories

Ho Myoung An, Hee Dong Kim, Yongjie Zhang, Yu Jeong Seo, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    The authors present a highly efficient program method for high-speed, low-voltage, and multi-bit/cell operation in the conventional silicon/oxide/nitride/oxide/silicon structure. This method uses a forward bias for collecting the electrons into the substrate whilst both substrate and drain biases are used for injecting the electrons into the nitride layer. With an aid of the substrate bias for electron injection, we obtained a program time as short as 600 ns and an ultralow-voltage operation with a drain voltage of 2 V and a substrate voltage of -3 V. In addition, a localized chargeinjection near the junction edge was confirmed with a threshold voltage difference of 1 V between the forward and reverse read.

    Original languageEnglish
    Article number124201
    JournalJapanese journal of applied physics
    Volume50
    Issue number12
    DOIs
    Publication statusPublished - 2011 Dec

    ASJC Scopus subject areas

    • General Engineering
    • General Physics and Astronomy

    Fingerprint

    Dive into the research topics of 'Substrate-bias assisted hot electron injection method for high-speed, low-voltage, and multi-bit flash memories'. Together they form a unique fingerprint.

    Cite this