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Subthreshold degradation of gate-all-around silicon nanowire field-effect transistors: Effect of interface trap charge
B. H. Hong, N. Cho, S. J. Lee, Y. S. Yu, L. Choi, Y. C. Jung, K. H. Cho, K. H. Yeo, D. W. Kim, G. Y. Jin, K. S. Oh, D. Park, S. H. Song, J. S. Rieh, S. W. Hwang
Research output: Contribution to journal › Article › peer-review
24
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(Scopus)