Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

T. G. Kim, E. K. Kim, S. K. Min, J. H. Park

Research output: Contribution to journalArticlepeer-review

Abstract

A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

Original languageEnglish
Pages (from-to)439-441
Number of pages3
JournalJournal of Materials Science Letters
Volume18
Issue number6
DOIs
Publication statusPublished - 1999 Jan 1

Bibliographical note

Funding Information:
This work was carried out in part with the support of the Korea Institute of Science and Technology (KIST). One of the authors (T.G.K) wishes to acknowledge the financial support of the Korea Research Foundation made in the program year 1997. T.G.K. is also grateful to Dr. Mutcho Ogura at the Electrotechnical Laboratory, Japan, for his encouragement.

ASJC Scopus subject areas

  • General Materials Science

Fingerprint

Dive into the research topics of 'Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array'. Together they form a unique fingerprint.

Cite this