Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

T. G. Kim; E. K. Kim; S. K. Min; J. H. Park

doi:10.1023/A:1006625927202

Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

T. G. Kim, E. K. Kim, S. K. Min, J. H. Park

Research output: Contribution to journal › Article › peer-review

Abstract

A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

Original language	English
Pages (from-to)	439-441
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	18
Issue number	6
DOIs	https://doi.org/10.1023/A:1006625927202
Publication status	Published - 1999 Jan 1

Bibliographical note

Funding Information:
This work was carried out in part with the support of the Korea Institute of Science and Technology (KIST). One of the authors (T.G.K) wishes to acknowledge the financial support of the Korea Research Foundation made in the program year 1997. T.G.K. is also grateful to Dr. Mutcho Ogura at the Electrotechnical Laboratory, Japan, for his encouragement.

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1023/A:1006625927202

Cite this

@article{f6d90691564446e884ce3299e757d491,

title = "Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array",

abstract = "A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.",

author = "Kim, {T. G.} and Kim, {E. K.} and Min, {S. K.} and Park, {J. H.}",

note = "Funding Information: This work was carried out in part with the support of the Korea Institute of Science and Technology (KIST). One of the authors (T.G.K) wishes to acknowledge the financial support of the Korea Research Foundation made in the program year 1997. T.G.K. is also grateful to Dr. Mutcho Ogura at the Electrotechnical Laboratory, Japan, for his encouragement.",

year = "1999",

month = jan,

day = "1",

doi = "10.1023/A:1006625927202",

language = "English",

volume = "18",

pages = "439--441",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

number = "6",

}

TY - JOUR

T1 - Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

AU - Kim, T. G.

AU - Kim, E. K.

AU - Min, S. K.

AU - Park, J. H.

N1 - Funding Information: This work was carried out in part with the support of the Korea Institute of Science and Technology (KIST). One of the authors (T.G.K) wishes to acknowledge the financial support of the Korea Research Foundation made in the program year 1997. T.G.K. is also grateful to Dr. Mutcho Ogura at the Electrotechnical Laboratory, Japan, for his encouragement.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

AB - A GaAs/AlGaAs BCS laser layer was grown by one-step metallo-organic chemical vapor deposition (MOCVD). The highest output powers as high as 16.4 mW for the single laser and 34.5 mW for the laser array with ten emitters were obtained at 400 mA for 800 μm long cavity devices.

UR - http://www.scopus.com/inward/record.url?scp=0033100781&partnerID=8YFLogxK

U2 - 10.1023/A:1006625927202

DO - 10.1023/A:1006625927202

M3 - Article

AN - SCOPUS:0033100781

SN - 0261-8028

VL - 18

SP - 439

EP - 441

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 6

ER -

Successful growth of a GaAs/AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this