TY - GEN
T1 - Suicide mediated grown silicon thin films for photodiodes
AU - Kim, Joondong
AU - Anderson, Wayne A.
AU - Han, Chang Soo
AU - Lee, Eung Sug
PY - 2006
Y1 - 2006
N2 - Quality Si thin films were grown by the metal-induced growth (MIG) method. Metal (Co, Ni, or mixing of Co and Ni) was thermally evaporated on a 200 nm-SiO2 coated Si wafer. Si sputtering was performed at 600-620°C in a dc magnetron system. The reaction of Si and metal first formed a suicide (CoSi2 or NiSi2) layer and further Si sputtering grew a Si film above it. The grown Si films were practically fabricated for Schottky photodiodes and electrically measured under one sun scan illumination (100 mW/cm ). The mixing of Co and Ni case improved the short circuit current density of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.
AB - Quality Si thin films were grown by the metal-induced growth (MIG) method. Metal (Co, Ni, or mixing of Co and Ni) was thermally evaporated on a 200 nm-SiO2 coated Si wafer. Si sputtering was performed at 600-620°C in a dc magnetron system. The reaction of Si and metal first formed a suicide (CoSi2 or NiSi2) layer and further Si sputtering grew a Si film above it. The grown Si films were practically fabricated for Schottky photodiodes and electrically measured under one sun scan illumination (100 mW/cm ). The mixing of Co and Ni case improved the short circuit current density of 10.6 mA/cm2, which is one order higher than that for the single Co catalyst case.
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M3 - Conference contribution
AN - SCOPUS:41549100927
SN - 9781604234220
T3 - Materials Research Society Symposium Proceedings
SP - 133
EP - 138
BT - Solar Energy Conversion
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -
