Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials

Adam J. Berro; Andrew J. Berglund; Peter T. Carmichael; Jong Seung Kim; J. Alexander Liddle

doi:10.1021/nn304285m

Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials

Adam J. Berro, Andrew J. Berglund, Peter T. Carmichael, Jong Seung Kim, J. Alexander Liddle

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.

Original language	English
Pages (from-to)	9496-9502
Number of pages	7
Journal	ACS nano
Volume	6
Issue number	11
DOIs	https://doi.org/10.1021/nn304285m
Publication status	Published - 2012 Nov 27

Keywords

chemically amplified resist
lithography
photoacid
single-molecule fluorescence
super-resolution microscopy

ASJC Scopus subject areas

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/nn304285m

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title = "Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials",

abstract = "We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.",

keywords = "chemically amplified resist, lithography, photoacid, single-molecule fluorescence, super-resolution microscopy",

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AU - Berro, Adam J.

AU - Berglund, Andrew J.

AU - Carmichael, Peter T.

AU - Kim, Jong Seung

AU - Liddle, J. Alexander

PY - 2012/11/27

Y1 - 2012/11/27

N2 - We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.

AB - We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.

KW - chemically amplified resist

KW - lithography

KW - photoacid

KW - single-molecule fluorescence

KW - super-resolution microscopy

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Super-resolution optical measurement of nanoscale photoacid distribution in lithographic materials

Abstract

Keywords

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