Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Jaemin Shin, Eunah Ko, June Park, Seung Geun Kim, Jae Woo Lee, Hyun Yong Yu, Changhwan Shin

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).

Original languageEnglish
Article number102104
JournalApplied Physics Letters
Volume113
Issue number10
DOIs
Publication statusPublished - 2018 Sept 3

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (10067746) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium (KSRC). This work was also supported by the National Research Foundation of Korea (NRF) grant, funded by the Korea government (MSIP) (No. 2017R1A2A2A05069708). Furthermore, this was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF2015R1C1A1A01051864).

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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