Suppress of leakage current in polycrystalline CdZnTe X-ray detectors

K. H. Kim; Y. H. Na; Y. J. Park; T. R. Jung; S. U. Kim

Suppress of leakage current in polycrystalline CdZnTe X-ray detectors

K. H. Kim, Y. H. Na, Y. J. Park, T. R. Jung, S. U. Kim

Research output: Contribution to journal › Conference article › peer-review

Abstract

The polycrystalline CdZnTe thick films which has high resistivity about 5 × 10⁹Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of ploycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Shottky barrier diodes exhibits low leakage current (14 nA/cm²) and high barrier height (φ_b = 0.798 eV).

Original language	English
Pages (from-to)	4515-4517
Number of pages	3
Journal	IEEE Nuclear Science Symposium Conference Record
Volume	7
Publication status	Published - 2004
Externally published	Yes
Event	2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy Duration: 2004 Oct 16 → 2004 Oct 22

Keywords

CdZnTe
High resistivity
Indium
Leakage current
Polycrystalline
Schottky diode

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Cite this

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title = "Suppress of leakage current in polycrystalline CdZnTe X-ray detectors",

abstract = "The polycrystalline CdZnTe thick films which has high resistivity about 5 × 109Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of ploycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Shottky barrier diodes exhibits low leakage current (14 nA/cm2) and high barrier height (φb = 0.798 eV).",

keywords = "CdZnTe, High resistivity, Indium, Leakage current, Polycrystalline, Schottky diode",

author = "Kim, {K. H.} and Na, {Y. H.} and Park, {Y. J.} and Jung, {T. R.} and Kim, {S. U.}",

year = "2004",

language = "English",

volume = "7",

pages = "4515--4517",

journal = "IEEE Nuclear Science Symposium Conference Record",

issn = "1095-7863",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors ; Conference date: 16-10-2004 Through 22-10-2004",

}

TY - JOUR

T1 - Suppress of leakage current in polycrystalline CdZnTe X-ray detectors

AU - Kim, K. H.

AU - Na, Y. H.

AU - Park, Y. J.

AU - Jung, T. R.

AU - Kim, S. U.

PY - 2004

Y1 - 2004

N2 - The polycrystalline CdZnTe thick films which has high resistivity about 5 × 109Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of ploycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Shottky barrier diodes exhibits low leakage current (14 nA/cm2) and high barrier height (φb = 0.798 eV).

AB - The polycrystalline CdZnTe thick films which has high resistivity about 5 × 109Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of ploycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Shottky barrier diodes exhibits low leakage current (14 nA/cm2) and high barrier height (φb = 0.798 eV).

KW - CdZnTe

KW - High resistivity

KW - Indium

KW - Leakage current

KW - Polycrystalline

KW - Schottky diode

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M3 - Conference article

AN - SCOPUS:23844466591

SN - 1095-7863

VL - 7

SP - 4515

EP - 4517

JO - IEEE Nuclear Science Symposium Conference Record

JF - IEEE Nuclear Science Symposium Conference Record

T2 - 2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors

Y2 - 16 October 2004 through 22 October 2004

ER -

Suppress of leakage current in polycrystalline CdZnTe X-ray detectors

Abstract

Keywords

ASJC Scopus subject areas

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