A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta 42CoZrNb 9.2IrMn 15.5CoFe 3.3Al Ox 2freelayerAl Ox 2CoFe 7.5IrMn 15.5Ru 60 (nm). The freelayer includes CoFe 2.3CoZrNb 3.4CoFe 3. A CoFe 5 nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4 V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.
Bibliographical noteFunding Information:
This work was supported by the National Program for Tera-level Nanodevices by the Korean Ministry of Science and Technology as a 21st Century Frontier Program. Y.K.K. acknowledges the support of a Dupont Young Professor Fellowship.
ASJC Scopus subject areas
- General Physics and Astronomy