Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion

Min Sung Song; Byong Sun Chun; Young Keun Kim; Injun Hwang; Taewan Kim

doi:10.1063/1.1853839

Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion

Min Sung Song, Byong Sun Chun, Young Keun Kim, Injun Hwang, Taewan Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta 42CoZrNb 9.2IrMn 15.5CoFe 3.3Al Ox 2freelayerAl Ox 2CoFe 7.5IrMn 15.5Ru 60 (nm). The freelayer includes CoFe 2.3CoZrNb 3.4CoFe 3. A CoFe 5 nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4 V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.

Original language	English
Article number	10C917
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1853839
Publication status	Published - 2005 May 15

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices by the Korean Ministry of Science and Technology as a 21st Century Frontier Program. Y.K.K. acknowledges the support of a Dupont Young Professor Fellowship.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1853839

Cite this

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title = "Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion",

abstract = "A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta 42CoZrNb 9.2IrMn 15.5CoFe 3.3Al Ox 2freelayerAl Ox 2CoFe 7.5IrMn 15.5Ru 60 (nm). The freelayer includes CoFe 2.3CoZrNb 3.4CoFe 3. A CoFe 5 nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4 V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.",

author = "Song, {Min Sung} and Chun, {Byong Sun} and Kim, {Young Keun} and Injun Hwang and Taewan Kim",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices by the Korean Ministry of Science and Technology as a 21st Century Frontier Program. Y.K.K. acknowledges the support of a Dupont Young Professor Fellowship.",

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doi = "10.1063/1.1853839",

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AU - Song, Min Sung

AU - Chun, Byong Sun

AU - Kim, Young Keun

AU - Hwang, Injun

AU - Kim, Taewan

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices by the Korean Ministry of Science and Technology as a 21st Century Frontier Program. Y.K.K. acknowledges the support of a Dupont Young Professor Fellowship.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta 42CoZrNb 9.2IrMn 15.5CoFe 3.3Al Ox 2freelayerAl Ox 2CoFe 7.5IrMn 15.5Ru 60 (nm). The freelayer includes CoFe 2.3CoZrNb 3.4CoFe 3. A CoFe 5 nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4 V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.

AB - A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta 42CoZrNb 9.2IrMn 15.5CoFe 3.3Al Ox 2freelayerAl Ox 2CoFe 7.5IrMn 15.5Ru 60 (nm). The freelayer includes CoFe 2.3CoZrNb 3.4CoFe 3. A CoFe 5 nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4 V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.

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Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion

Abstract

Bibliographical note

ASJC Scopus subject areas

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