Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

Jae Hyun Park, Tae sig Chang, Minsuk Kim, Sola Woo, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, we investigate threshold voltage (VTH) variability of metal-oxide-semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced VTH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3σ (VTH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability.

Original languageEnglish
Pages (from-to)169-177
Number of pages9
JournalSuperlattices and Microstructures
Publication statusPublished - 2018 Jan

Bibliographical note

Funding Information:
This work was partly supported by SK Hynix and the Brain Korea 21 Plus Project in 2017. This material is based upon work supported by the Ministry of Trade, Industry and Energy under Industrial Strategic Technology Development Program. ( 10067791 , ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’).

Publisher Copyright:
© 2017 Elsevier Ltd


  • Impedance field method
  • Ion implantation
  • Random dopant fluctuation
  • Sense amplifier
  • Threshold voltage variability

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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