Surface Acoustic Wave-Based Infrared Sensor with Aluminum Nitride Films Deposited

Jin Woo Lee, Byungmoon Lee, Jong Woo Kim, Byeong Kwon Ju

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    This paper reports on a surface acoustic wave-based infrared sensor with an aluminum nitride thin film deposited on interdigital transducers. The result of the coupling-of-modes (COM) modeling provides an optimized 0.64 mm × 1.80 mm design for interdigital transducers. The sensor resonates at 251.35 MHz with an insertion loss (IL) of-11.80 dB, and the IL difference between the central peak and the second peak is 5.89 dB, which is sufficient for signal processing. The area ratio of the deposited photoelectric film on the device determines the characteristics of the frequency response of the sensor. The response to the intensity of infrared irradiation exhibits good linearity of 99.85% at a wavelength of 850 nm when the thickness and area ratio of the deposited aluminum nitride thin film is 50 nm and 75%, respectively. When the response cycles are observed against infrared light, the sensor not only reacts at high speeds but also returns to the initial state rapidly. The effects of location, including the distance and angle between the light source and the sensor, are also suitable for practical application.

    Original languageEnglish
    Article number9086503
    Pages (from-to)13277-13283
    Number of pages7
    JournalIEEE Sensors Journal
    Volume20
    Issue number22
    DOIs
    Publication statusPublished - 2020 Nov 15

    Bibliographical note

    Funding Information:
    Manuscript received March 17, 2020; revised April 26, 2020; accepted April 26, 2020. Date of publication May 6, 2020; date of current version October 16, 2020. This work was supported by the Research and Development Program of MOTIE/KEIT “Development of the Multi-Sensor for UV, Ambient Light, and Proximity for Next Smart Device” under Grant 10064078. The associate editor coordinating the review of this article and approving it for publication was Dr. Emiliano Schena. (Corresponding author: Byeong-Kwon Ju.) The authors are with the Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, South Korea (e-mail: [email protected]). Digital Object Identifier 10.1109/JSEN.2020.2992697

    Publisher Copyright:
    © 2001-2012 IEEE.

    Keywords

    • Aluminum nitride
    • infrared sensor
    • proximity sensor
    • sensor packaging
    • surface acoustic wave

    ASJC Scopus subject areas

    • Instrumentation
    • Electrical and Electronic Engineering

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