Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

Young Ran Park, Min Jae Ko, Yoon Ho Song, Cheol Jin Lee

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8 Citations (Scopus)


We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.

Original languageEnglish
Article number153516
JournalJournal of Applied Physics
Issue number15
Publication statusPublished - 2013 Oct 21

Bibliographical note

Funding Information:
This work was supported by the World Class University Project (WCU, R32-2010-000-10082-0) funded by the Ministry of Education, Science, and Technology, a grant from the New & Renewable Energy Program (No. 2010T100100651) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Trade, Industry & Energy (MOTIE), ETRI Creative R&D program (12ZF1100), and a Korea University Grant.

ASJC Scopus subject areas

  • General Physics and Astronomy


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