Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

Young Ran Park; Min Jae Ko; Yoon Ho Song; Cheol Jin Lee

doi:10.1063/1.4826206

Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

Young Ran Park
, Min Jae Ko
, Yoon Ho Song
, Cheol Jin Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO₃ treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp² binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp² and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.

Original language	English
Article number	153516
Journal	Journal of Applied Physics
Volume	114
Issue number	15
DOIs	https://doi.org/10.1063/1.4826206
Publication status	Published - 2013 Oct 21

Bibliographical note

Funding Information:
This work was supported by the World Class University Project (WCU, R32-2010-000-10082-0) funded by the Ministry of Education, Science, and Technology, a grant from the New & Renewable Energy Program (No. 2010T100100651) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Trade, Industry & Energy (MOTIE), ETRI Creative R&D program (12ZF1100), and a Korea University Grant.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.4826206

Cite this

@article{f0192f7337fb4d50afc7292bfe6b64ff,

title = "Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks",

abstract = "We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.",

author = "Park, \{Young Ran\} and Ko, \{Min Jae\} and Song, \{Yoon Ho\} and Lee, \{Cheol Jin\}",

note = "Funding Information: This work was supported by the World Class University Project (WCU, R32-2010-000-10082-0) funded by the Ministry of Education, Science, and Technology, a grant from the New \& Renewable Energy Program (No. 2010T100100651) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Trade, Industry \& Energy (MOTIE), ETRI Creative R\&D program (12ZF1100), and a Korea University Grant.",

year = "2013",

month = oct,

day = "21",

doi = "10.1063/1.4826206",

language = "English",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

AU - Park, Young Ran

AU - Ko, Min Jae

AU - Song, Yoon Ho

AU - Lee, Cheol Jin

N1 - Funding Information: This work was supported by the World Class University Project (WCU, R32-2010-000-10082-0) funded by the Ministry of Education, Science, and Technology, a grant from the New & Renewable Energy Program (No. 2010T100100651) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Trade, Industry & Energy (MOTIE), ETRI Creative R&D program (12ZF1100), and a Korea University Grant.

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.

AB - We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.

UR - https://www.scopus.com/pages/publications/84886509570

U2 - 10.1063/1.4826206

DO - 10.1063/1.4826206

M3 - Article

AN - SCOPUS:84886509570

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 15

M1 - 153516

ER -

Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this