Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminumoxide has a high negative charge,while the SiNx filmis known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivationwas understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.
Bibliographical noteFunding Information:
Funding: This work was supported by the “Human Resources Program in Energy Technology” and the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), funded by the Ministry of Trade, Industry, and Energy, Republic of Korea (No. 20154030200760), (No. 20188550000450). This research was also supported by the National Research Foundation of Korea (2017M1A2A2087351), funded by the Ministry of Science, ICT, and Future Planning of Korea.
© 2019 by the authors.
- Aluminum oxide
- Chemical passivation
- Field-effect passivation
- Silicon solar cells
- Surface passivation
ASJC Scopus subject areas
- Computer Science (miscellaneous)
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- Renewable Energy, Sustainability and the Environment
- Building and Construction
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