Surface passivation of crystalline silicon wafer via hydrogen plasma pre-treatment for solar cells

Keyphrases

• Atomic Concentration 16%
• Carbon Concentration 16%
• Carrier Lifetime 16%
• Crystalline Silicon Wafer 100%
• Dangling Bonds 16%
• Direct Plasma 16%
• Hydrogen Plasma 33%
• Hydrogenated Silicon Nitride 16%
• In-situ Process 16%
• Interfacial Region 16%
• Native Oxide 16%
• Passivation Quality 16%
• Surface Recombination Velocity 16%
• Treated Surface 16%
• Velocity Measurement 16%
• Wet Process 16%

Engineering

• Carbon Concentration 20%
• Carrier Lifetime 60%
• Dangling Bond 20%
• Front Surface 20%
• Interfacial Region 20%
• Minority Carriers 40%
• Surface Recombination Velocity 20%
• Wet Process 20%

Material Science

• Mass Spectrometry 25%