Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Gwang Sik Kim; Seung Hwan Kim; Jeong Kyu Kim; Changhwan Shin; Jin Hong Park; Krishna C. Saraswat; Byung Jin Cho; Hyun Yong Yu

doi:10.1109/LED.2015.2440434

Surface Passivation of Germanium Using SF₆ Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Gwang Sik Kim, Seung Hwan Kim, Jeong Kyu Kim, Changhwan Shin, Jin Hong Park, Krishna C. Saraswat, Byung Jin Cho, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF₆ plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (ρ_c) of 1.14 × 10^-3~Ω. cm² and 0.31 eV of Schottky barrier height is achieved for a Ti/SF₆-treated n-type Ge (n-Ge) ( N_d= 1 × 10¹⁷ cm^-3) contact, exhibiting 1700 times ρ_c reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.

Original language	English
Article number	7116476
Pages (from-to)	745-747
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/LED.2015.2440434
Publication status	Published - 2015 Aug 1

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Fermi-level unpinning
SF6 plasma
contact resistance
germanium
surface passivation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2015.2440434

Cite this

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title = "Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET",

abstract = "We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF6 plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (ρc) of 1.14 × 10-3~Ω. cm2 and 0.31 eV of Schottky barrier height is achieved for a Ti/SF6-treated n-type Ge (n-Ge) ( Nd= 1 × 1017 cm-3) contact, exhibiting 1700 times ρc reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.",

keywords = "Fermi-level unpinning, SF6 plasma, contact resistance, germanium, surface passivation",

author = "Kim, {Gwang Sik} and Kim, {Seung Hwan} and Kim, {Jeong Kyu} and Changhwan Shin and Park, {Jin Hong} and Saraswat, {Krishna C.} and Cho, {Byung Jin} and Yu, {Hyun Yong}",

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doi = "10.1109/LED.2015.2440434",

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AU - Kim, Gwang Sik

AU - Kim, Seung Hwan

AU - Kim, Jeong Kyu

AU - Shin, Changhwan

AU - Park, Jin Hong

AU - Saraswat, Krishna C.

AU - Cho, Byung Jin

AU - Yu, Hyun Yong

PY - 2015/8/1

Y1 - 2015/8/1

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AB - We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF6 plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (ρc) of 1.14 × 10-3~Ω. cm2 and 0.31 eV of Schottky barrier height is achieved for a Ti/SF6-treated n-type Ge (n-Ge) ( Nd= 1 × 1017 cm-3) contact, exhibiting 1700 times ρc reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.

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KW - SF6 plasma

KW - contact resistance

KW - germanium

KW - surface passivation

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