Surface pinning effect of an antiferromagnetic interlayer exchange coupling in (Ga1−xMnxAs/GaAs:Be)10 multilayer

Byeong Gwan Cho, Dong Ok Kim, Jae Young Kim, Jae Ho Chung, Sanghoon Lee, Yongseong Choi, Jun Woo Choi, Dong Ryeol Lee, Ki Bong Lee

Research output: Contribution to journalArticlepeer-review


The depth-resolved magnetic configuration of a Ga0.97Mn0.03As/GaAs:Be multilayer with an antiferromagnetic interlayer exchange coupling was investigated using surface-sensitive soft x-ray resonant magnetic reflectivity (XRMR). We observed intriguing opposite increments in the XRMR intensities at the half-Bragg peak position between two different remanent states with opposite field sweep directions. A quantitative analysis shows that these opposite intensity increments result from two different anti-parallel spin configurations in such a way that the magnetization of top-most magnetic layer is pinned along the saturation magnetization direction before the remanent state. This surface pinning effect is important for understanding spin-dependent transport in semiconducting magnetic multilayers.

Original languageEnglish
Pages (from-to)121-125
Number of pages5
JournalJournal of the Korean Physical Society
Issue number2
Publication statusPublished - 2017 Jul 1

Bibliographical note

Publisher Copyright:
© 2017, The Korean Physical Society.


  • Dilute magnetic semiconductors
  • Interlayer exchange coupling
  • Magnetic multilayer
  • X-ray resonant magnetic reflectivity

ASJC Scopus subject areas

  • General Physics and Astronomy


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