Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever

Engineering & Materials Science

• Silicon oxides 100%
• Surface potential 93%
• Atomic force microscopy 88%
• Silicon nitride 83%
• Nitrides 83%
• Field effect transistors 73%
• Silica 71%
• Oxides 59%
• Imaging techniques 52%
• Electric potential 35%
• Moisture 29%
• Silicon 27%
• Temperature 13%

Chemical Compounds

• Silicon Dioxide 84%
• Surface Potential 76%
• Field Effect 68%
• Nitride 66%
• Retention Time 63%
• Atomic Force Microscopy 54%
• Voltage 25%
• Application 21%
• Time 12%

Physics & Astronomy

• silicon oxides 72%
• nitrides 64%
• field effect transistors 54%
• oxides 43%
• silicon nitrides 33%
• silicon dioxide 26%
• atomic force microscopy 26%
• moisture 18%
• low voltage 16%
• high voltages 15%
• silicon 9%
• temperature 5%