Keyphrases
Atomic Force Microscopy
66%
Cantilever
100%
Charge Confinement
33%
Contact Mode
33%
Continuous Application
33%
DC Bias
33%
External Parameters
33%
Field-effect Transistors
100%
Low Voltage
33%
Moisture
33%
Nitrided Oxide
100%
Oxide Nitride
100%
Retention Time
66%
Silica
33%
Silicon Dioxide
66%
Silicon Nitride
33%
Silicon Nitride Layer
33%
Silicon Structure
100%
Surface Potential
100%
Transistor Structure
33%
Voltage Conditions
33%
Material Science
Field Effect Transistor
100%
Nitride Compound
100%
Oxide Compound
100%
Silicon
100%
Silicon Dioxide
66%
Silicon Nitride
66%
Surface (Surface Science)
66%
Engineering
Atomic Force Microscopy
66%
Contact Mode
33%
Field-Effect Transistor
100%
Nitride
33%
Nitride Layer
33%
Oxide-Nitride-Oxide
100%
Retention Time
66%
Silicon Dioxide
33%
Silicon Dioxide (Sio2)
33%
Surface Potential
100%