Surface roughness effect on bias voltage characteristics in CoNbZr-based magnetic tunnel junctions

B. S. Chun; C. M. Choi; I. C. Chu; S. R. Lee; Y. K. Kim

doi:10.1016/j.jmmm.2003.12.616

Surface roughness effect on bias voltage characteristics in CoNbZr-based magnetic tunnel junctions

B. S. Chun, C. M. Choi, I. C. Chu, S. R. Lee, Y. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

CoNbZr layers have been employed in magnetic tunnel junctions (MTJs) to substitute traditionally used Ta layers. The CoNbZr-based junctions exhibited better V_h (the voltage where MR ratio becomes half) characteristics than Ta-based ones in as-deposited state (164 mV vs. 151 mV at 10 K). Moreover, V_h gradually increased at higher temperatures for CoNbZr-based junctions while almost no change was observed for Ta-based ones (345 mV vs. 144 mV at RT, respectively). This is because CoNbZr-based junctions offer smoother interface structure than Ta-based one.

Original language	English
Pages (from-to)	e1481-e1483
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.616
Publication status	Published - 2004 May

Keywords

Bias voltage dependence
CoNbZr
Magnetic tunnel junctions
Surface roughness

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2003.12.616

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title = "Surface roughness effect on bias voltage characteristics in CoNbZr-based magnetic tunnel junctions",

abstract = "CoNbZr layers have been employed in magnetic tunnel junctions (MTJs) to substitute traditionally used Ta layers. The CoNbZr-based junctions exhibited better Vh (the voltage where MR ratio becomes half) characteristics than Ta-based ones in as-deposited state (164 mV vs. 151 mV at 10 K). Moreover, Vh gradually increased at higher temperatures for CoNbZr-based junctions while almost no change was observed for Ta-based ones (345 mV vs. 144 mV at RT, respectively). This is because CoNbZr-based junctions offer smoother interface structure than Ta-based one.",

keywords = "Bias voltage dependence, CoNbZr, Magnetic tunnel junctions, Surface roughness",

author = "Chun, {B. S.} and Choi, {C. M.} and Chu, {I. C.} and Lee, {S. R.} and Kim, {Y. K.}",

note = "Funding Information: This work was supported by Grant No. R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21 century Frontier Programs, the National Research Laboratory Program, and by the DuPont Young Faculty Program.",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.616",

language = "English",

volume = "272-276",

pages = "e1481--e1483",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "SUPPL. 1",

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TY - JOUR

T1 - Surface roughness effect on bias voltage characteristics in CoNbZr-based magnetic tunnel junctions

AU - Chun, B. S.

AU - Choi, C. M.

AU - Chu, I. C.

AU - Lee, S. R.

AU - Kim, Y. K.

N1 - Funding Information: This work was supported by Grant No. R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21 century Frontier Programs, the National Research Laboratory Program, and by the DuPont Young Faculty Program.

PY - 2004/5

Y1 - 2004/5

N2 - CoNbZr layers have been employed in magnetic tunnel junctions (MTJs) to substitute traditionally used Ta layers. The CoNbZr-based junctions exhibited better Vh (the voltage where MR ratio becomes half) characteristics than Ta-based ones in as-deposited state (164 mV vs. 151 mV at 10 K). Moreover, Vh gradually increased at higher temperatures for CoNbZr-based junctions while almost no change was observed for Ta-based ones (345 mV vs. 144 mV at RT, respectively). This is because CoNbZr-based junctions offer smoother interface structure than Ta-based one.

AB - CoNbZr layers have been employed in magnetic tunnel junctions (MTJs) to substitute traditionally used Ta layers. The CoNbZr-based junctions exhibited better Vh (the voltage where MR ratio becomes half) characteristics than Ta-based ones in as-deposited state (164 mV vs. 151 mV at 10 K). Moreover, Vh gradually increased at higher temperatures for CoNbZr-based junctions while almost no change was observed for Ta-based ones (345 mV vs. 144 mV at RT, respectively). This is because CoNbZr-based junctions offer smoother interface structure than Ta-based one.

KW - Bias voltage dependence

KW - CoNbZr

KW - Magnetic tunnel junctions

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=21044456463&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.616

DO - 10.1016/j.jmmm.2003.12.616

M3 - Article

AN - SCOPUS:21044456463

SN - 0304-8853

VL - 272-276

SP - e1481-e1483

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - SUPPL. 1

ER -

Surface roughness effect on bias voltage characteristics in CoNbZr-based magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

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