Abstract
We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.
Original language | English |
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Pages (from-to) | 20659-20665 |
Number of pages | 7 |
Journal | Optics Express |
Volume | 30 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2022 Jun 6 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics