We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.
Bibliographical noteFunding Information:
Korea Institute of Science and Technology (2E31550, 2V09310); Institute for Information and Communications Technology Planning and Evaluation (2020-0-00841).
© 2022 Optica Publishing Group
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics