SWIR imaging using PbS QD photodiode array sensors

Sehwan Chang; Junyoung Jin; Jihoon Kyhm; Tae Hwan Park; Jongtae Ahn; Sung Yul L. Park; Suk In Park; Do Kyung Hwang; Sang Soo Choi; Tae Yeon Seong; Jin Dong Song; Gyu Weon Hwang

doi:10.1364/OE.459090

SWIR imaging using PbS QD photodiode array sensors

Sehwan Chang, Junyoung Jin, Jihoon Kyhm, Tae Hwan Park, Jongtae Ahn, Sung Yul L. Park, Suk In Park, Do Kyung Hwang, Sang Soo Choi, Tae Yeon Seong, Jin Dong Song, Gyu Weon Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10⁻³ A/W and 1.20 × 10⁻² A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

Original language	English
Pages (from-to)	20659-20665
Number of pages	7
Journal	Optics Express
Volume	30
Issue number	12
DOIs	https://doi.org/10.1364/OE.459090
Publication status	Published - 2022 Jun 6

Bibliographical note

Funding Information:
Korea Institute of Science and Technology (2E31550, 2V09310); Institute for Information and Communications Technology Planning and Evaluation (2020-0-00841).

Publisher Copyright:
© 2022 Optica Publishing Group

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.459090

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title = "SWIR imaging using PbS QD photodiode array sensors",

abstract = "We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.",

author = "Sehwan Chang and Junyoung Jin and Jihoon Kyhm and Park, {Tae Hwan} and Jongtae Ahn and Park, {Sung Yul L.} and Park, {Suk In} and Hwang, {Do Kyung} and Choi, {Sang Soo} and Seong, {Tae Yeon} and Song, {Jin Dong} and Hwang, {Gyu Weon}",

note = "Funding Information: Korea Institute of Science and Technology (2E31550, 2V09310); Institute for Information and Communications Technology Planning and Evaluation (2020-0-00841). Publisher Copyright: {\textcopyright} 2022 Optica Publishing Group",

year = "2022",

month = jun,

day = "6",

doi = "10.1364/OE.459090",

language = "English",

volume = "30",

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TY - JOUR

T1 - SWIR imaging using PbS QD photodiode array sensors

AU - Chang, Sehwan

AU - Jin, Junyoung

AU - Kyhm, Jihoon

AU - Park, Tae Hwan

AU - Ahn, Jongtae

AU - Park, Sung Yul L.

AU - Park, Suk In

AU - Hwang, Do Kyung

AU - Choi, Sang Soo

AU - Seong, Tae Yeon

AU - Song, Jin Dong

AU - Hwang, Gyu Weon

N1 - Funding Information: Korea Institute of Science and Technology (2E31550, 2V09310); Institute for Information and Communications Technology Planning and Evaluation (2020-0-00841). Publisher Copyright: © 2022 Optica Publishing Group

PY - 2022/6/6

Y1 - 2022/6/6

N2 - We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

AB - We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

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DO - 10.1364/OE.459090

M3 - Article

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AN - SCOPUS:85133002217

SN - 1094-4087

VL - 30

SP - 20659

EP - 20665

JO - Optics Express

JF - Optics Express

IS - 12

ER -

SWIR imaging using PbS QD photodiode array sensors

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