SWIR imaging using PbS QD photodiode array sensors

Sehwan Chang, Junyoung Jin, Jihoon Kyhm, Tae Hwan Park, Jongtae Ahn, Sung Yul L. Park, Suk In Park, Do Kyung Hwang, Sang Soo Choi, Tae Yeon Seong, Jin Dong Song, Gyu Weon Hwang

Research output: Contribution to journalArticlepeer-review


We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10−3 A/W and 1.20 × 10−2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

Original languageEnglish
Pages (from-to)20659-20665
Number of pages7
JournalOptics Express
Issue number12
Publication statusPublished - 2022 Jun 6

Bibliographical note

Publisher Copyright:
© 2022 Optica Publishing Group

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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