Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

J. Y. Hwang, S. S. Kim, M. Y. Kim, J. R. Rhee, B. S. Chun, Y. K. Kim, T. W. Kim, H. B. Lee, S. C. Yu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was Si/SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB (t)/Ru 60 (in nm). CoFeSiB has low saturation magnetization (Ms) of 560 emu/cm3 and high anisotropy constant (Ku) of 2,800 erg/cm3. These properties caused low coercivity (Hc) and high sensitivity in MTJs. It was also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

Original languageEnglish
Pages (from-to)e276-e278
JournalJournal of Magnetism and Magnetic Materials
Issue number1
Publication statusPublished - 2006 Sept


  • Amorphous magnetic materials
  • CoFeSiB
  • Coercivity
  • Magnetic tunnel junction
  • Switching characteristics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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