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Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer
J. Y. Hwang
, S. S. Kim
, M. Y. Kim
, J. R. Rhee
*
, B. S. Chun
,
Y. K. Kim
, T. W. Kim
, H. B. Lee
, S. C. Yu
*
Corresponding author for this work
Research output
:
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Article
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peer-review
3
Citations (Scopus)
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Keyphrases
Free Layer
100%
Magnetic Tunnel Junction
100%
Switching Characteristics
100%
CoFeSiB
100%
High Sensitivity
16%
Layer Thickness
16%
Simulation-based
16%
Si-SiO2
16%
IrMn
16%
CoFe
16%
Micromagnetic Simulation
16%
Sub-micrometer
16%
Junction Structure
16%
AlOx
16%
Low Coercivity
16%
Gilbert
16%
High Anisotropy
16%
Anisotropy Constant
16%
Low Saturation Magnetization
16%
Demagnetizing Field
16%
Engineering
Free Layer
100%
Magnetic Tunnel Junction
100%
Layer Thickness
25%
Micromagnetics
25%
Saturation Magnetization
25%
Gilbert Equation
25%
Anisotropy Constant
25%
Coercivity
25%
Demagnetization
25%
Silicon Dioxide
25%
Medicine and Dentistry
Silicon Dioxide
100%
Material Science
Anisotropy
100%