Switching characteristics of nanowire feedback field-effect transistors with nanocrystal charge spacers on plastic substrates

Youngin Jeon; Minsuk Kim; Yoonjoong Kim; Sangsig Kim

doi:10.1021/nn500494a

Switching characteristics of nanowire feedback field-effect transistors with nanocrystal charge spacers on plastic substrates

Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p⁺-i-n⁺ Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of ∼10⁵ and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.

Original language	English
Pages (from-to)	3781-3787
Number of pages	7
Journal	ACS nano
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/nn500494a
Publication status	Published - 2014 Apr 22

Keywords

feedback loop
field-effect transistor
plastic substrate
silicon nanowires
subthreshold swing

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1021/nn500494a

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abstract = "In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p+-i-n+ Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of ∼105 and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.",

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AU - Jeon, Youngin

AU - Kim, Minsuk

AU - Kim, Yoonjoong

AU - Kim, Sangsig

PY - 2014/4/22

Y1 - 2014/4/22

N2 - In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p+-i-n+ Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of ∼105 and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.

AB - In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p+-i-n+ Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of ∼105 and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.

KW - feedback loop

KW - field-effect transistor

KW - plastic substrate

KW - silicon nanowires

KW - subthreshold swing

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Switching characteristics of nanowire feedback field-effect transistors with nanocrystal charge spacers on plastic substrates

Abstract

Keywords

ASJC Scopus subject areas

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