Switching characteristics of spin valve devices designed for MRAM applications

S. E. Russek; J. O. Oti; Young K. Kim

doi:10.1016/S0304-8853(98)00590-3

Switching characteristics of spin valve devices designed for MRAM applications

S. E. Russek, J. O. Oti, Young K. Kim

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

The low-frequency performance of spin valve giant magnetoresistive devices, designed for digital applications, has been examined as a function of device line width and aspect ratio. NiFe-Co-Cu-Co-NiFe-FeMn devices have been fabricated with line widths down to 0.4 μm and aspect ratios that varied between 10:1 and 1.5:1. As the device line width decreases, the switching fields and switching field asymmetry increase due to magnetostatic effects. As the aspect ratio decreases, the switching field asymmetry increases rapidly and the devices become prone to domain noise. The experimentally observed switching behavior is compared to uniform rotation models to determine the accuracy with which the switching fields can be predicted.

Original language	English
Pages (from-to)	6-8
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	198
DOIs	https://doi.org/10.1016/S0304-8853(98)00590-3
Publication status	Published - 1999 Jun 1
Externally published	Yes
Event	Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can Duration: 1998 Jun 14 → 1998 Jun 19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(98)00590-3

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title = "Switching characteristics of spin valve devices designed for MRAM applications",

abstract = "The low-frequency performance of spin valve giant magnetoresistive devices, designed for digital applications, has been examined as a function of device line width and aspect ratio. NiFe-Co-Cu-Co-NiFe-FeMn devices have been fabricated with line widths down to 0.4 μm and aspect ratios that varied between 10:1 and 1.5:1. As the device line width decreases, the switching fields and switching field asymmetry increase due to magnetostatic effects. As the aspect ratio decreases, the switching field asymmetry increases rapidly and the devices become prone to domain noise. The experimentally observed switching behavior is compared to uniform rotation models to determine the accuracy with which the switching fields can be predicted.",

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T1 - Switching characteristics of spin valve devices designed for MRAM applications

AU - Russek, S. E.

AU - Oti, J. O.

AU - Kim, Young K.

PY - 1999/6/1

Y1 - 1999/6/1

N2 - The low-frequency performance of spin valve giant magnetoresistive devices, designed for digital applications, has been examined as a function of device line width and aspect ratio. NiFe-Co-Cu-Co-NiFe-FeMn devices have been fabricated with line widths down to 0.4 μm and aspect ratios that varied between 10:1 and 1.5:1. As the device line width decreases, the switching fields and switching field asymmetry increase due to magnetostatic effects. As the aspect ratio decreases, the switching field asymmetry increases rapidly and the devices become prone to domain noise. The experimentally observed switching behavior is compared to uniform rotation models to determine the accuracy with which the switching fields can be predicted.

AB - The low-frequency performance of spin valve giant magnetoresistive devices, designed for digital applications, has been examined as a function of device line width and aspect ratio. NiFe-Co-Cu-Co-NiFe-FeMn devices have been fabricated with line widths down to 0.4 μm and aspect ratios that varied between 10:1 and 1.5:1. As the device line width decreases, the switching fields and switching field asymmetry increase due to magnetostatic effects. As the aspect ratio decreases, the switching field asymmetry increases rapidly and the devices become prone to domain noise. The experimentally observed switching behavior is compared to uniform rotation models to determine the accuracy with which the switching fields can be predicted.

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DO - 10.1016/S0304-8853(98)00590-3

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SN - 0304-8853

VL - 198

SP - 6

EP - 8

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

T2 - Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98)

Y2 - 14 June 1998 through 19 June 1998

ER -

Switching characteristics of spin valve devices designed for MRAM applications

Abstract

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