Abstract
The low-frequency performance of spin valve giant magnetoresistive devices, designed for digital applications, has been examined as a function of device line width and aspect ratio. NiFe-Co-Cu-Co-NiFe-FeMn devices have been fabricated with line widths down to 0.4 μm and aspect ratios that varied between 10:1 and 1.5:1. As the device line width decreases, the switching fields and switching field asymmetry increase due to magnetostatic effects. As the aspect ratio decreases, the switching field asymmetry increases rapidly and the devices become prone to domain noise. The experimentally observed switching behavior is compared to uniform rotation models to determine the accuracy with which the switching fields can be predicted.
Original language | English |
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Pages (from-to) | 6-8 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 198 |
DOIs | |
Publication status | Published - 1999 Jun 1 |
Externally published | Yes |
Event | Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can Duration: 1998 Jun 14 → 1998 Jun 19 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics