Switching characterization and failure analysis of in2Se 3 based phase change memory

Heon Lee, Dae Hwan Kang

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Stoichiometric in2SE/33 films were deposited at room temperature. X-ray diffractometry (XRD) and field-emission scanning electron microscopy (FE-SEM) showed that the as-deposited films were amorphous and had very smooth surface morphology while the films annealed at 250°C or higher temperatures were crystalline and had a rough surface. A cross-point-type phase change memory device with a Mo/In2Se3/Mo layered structure was fabricated. Static mode (or DC mode) and pulsed mode switching tests were successfully carried out on these cross-point-type devices. In the DC mode test, the as-grown amorphous In2Se3 resistor showed very high resistance in the low-voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was markedly reduced due to the formation of an electrically conducting path (or a crystallized path). Pulsed mode switching performed on a phase change memory device with 0.7-μm-diameter contact hole showed that the resetting (amorphization) and setting (crystallization) of the device were achieved with a 70ns pulse and a 1 μs pulse, respectively. After repeated switching, most of devices were stuck in the set state and could no longer be switched to the reset state. Cross-sectional SEM of these failed devices showed agglomerated voids near the interface between the In2Se3 resistor and Mo electrode, which may be responsible for the stuck-set failure of the devices.

Original languageEnglish
Pages (from-to)4759-4763
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7 A
Publication statusPublished - 2005 Jul 8


  • Electrical reversible switching
  • Failure analysis
  • InSe
  • Phase change memory
  • Void formation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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