Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor

Hyun–Gyu –G Hwang; Jong–Un –U Woo; Tae–Ho –H Lee; Sung Mean Park; Tae–Gon –G Lee; Woong Hee Lee; Sahn Nahm

doi:10.1016/j.matdes.2019.108400

Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta₂O₅ memristor

Hyun–Gyu –G Hwang, Jong–Un –U Woo, Tae–Ho –H Lee, Sung Mean Park, Tae–Gon –G Lee, Woong Hee Lee, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

An artificial synapse that can perform both learning and memory functions was realized using an amorphous Ta₂O₅ memristor. A Pt/Ta₂O₅/TiN memristor, with an amorphous Ta₂O₅ film grown at 100 °C, exhibited reliable bipolar switching properties at the various conductance states required for artificial synapse applications; in addition, it exhibited the transmission properties of physiological synapses. Various other synaptic properties were also obtained from the Ta₂O₅ memristor by modulating the input bias. The metaplasticity of a physiological synapse, which is a preliminary-spike-enhanced synaptic function, was also emulated in the Ta₂O₅ memristor via the metaplasticity of potentiation/depression and spike-timing-dependent plasticity. The synaptic plasticity and metaplasticity of the Ta₂O₅ memristor can be understood via the construction and destruction of oxygen vacancy filaments in the memristor.

Original language	English
Article number	108400
Journal	Materials and Design
Volume	187
DOIs	https://doi.org/10.1016/j.matdes.2019.108400
Publication status	Published - 2020 Feb

Keywords

Amorphous TaO films
Artificial synapse
Memristor
Metaplasticity
Neuromorphic device
Synaptic plasticity

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matdes.2019.108400

Cite this

@article{0d947d56df9042a1b82e7489e97a9cd6,

title = "Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor",

abstract = "An artificial synapse that can perform both learning and memory functions was realized using an amorphous Ta2O5 memristor. A Pt/Ta2O5/TiN memristor, with an amorphous Ta2O5 film grown at 100 °C, exhibited reliable bipolar switching properties at the various conductance states required for artificial synapse applications; in addition, it exhibited the transmission properties of physiological synapses. Various other synaptic properties were also obtained from the Ta2O5 memristor by modulating the input bias. The metaplasticity of a physiological synapse, which is a preliminary-spike-enhanced synaptic function, was also emulated in the Ta2O5 memristor via the metaplasticity of potentiation/depression and spike-timing-dependent plasticity. The synaptic plasticity and metaplasticity of the Ta2O5 memristor can be understood via the construction and destruction of oxygen vacancy filaments in the memristor.",

keywords = "Amorphous TaO films, Artificial synapse, Memristor, Metaplasticity, Neuromorphic device, Synaptic plasticity",

author = "Hwang, {Hyun–Gyu –G} and Woo, {Jong–Un –U} and Lee, {Tae–Ho –H} and Park, {Sung Mean} and Lee, {Tae–Gon –G} and Lee, {Woong Hee} and Sahn Nahm",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. All data generated or analyzed during this study are included in this published article and its supplementary material files. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2019 The Authors",

year = "2020",

month = feb,

doi = "10.1016/j.matdes.2019.108400",

language = "English",

volume = "187",

journal = "Materials and Design",

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AU - Hwang, Hyun–Gyu –G

AU - Woo, Jong–Un –U

AU - Lee, Tae–Ho –H

AU - Park, Sung Mean

AU - Lee, Tae–Gon –G

AU - Lee, Woong Hee

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. All data generated or analyzed during this study are included in this published article and its supplementary material files. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: © 2019 The Authors

PY - 2020/2

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N2 - An artificial synapse that can perform both learning and memory functions was realized using an amorphous Ta2O5 memristor. A Pt/Ta2O5/TiN memristor, with an amorphous Ta2O5 film grown at 100 °C, exhibited reliable bipolar switching properties at the various conductance states required for artificial synapse applications; in addition, it exhibited the transmission properties of physiological synapses. Various other synaptic properties were also obtained from the Ta2O5 memristor by modulating the input bias. The metaplasticity of a physiological synapse, which is a preliminary-spike-enhanced synaptic function, was also emulated in the Ta2O5 memristor via the metaplasticity of potentiation/depression and spike-timing-dependent plasticity. The synaptic plasticity and metaplasticity of the Ta2O5 memristor can be understood via the construction and destruction of oxygen vacancy filaments in the memristor.

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