Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor

Hyun–Gyu –G Hwang; Jong–Un –U Woo; Tae–Ho –H Lee; Sung Mean Park; Tae–Gon –G Lee; Woong Hee Lee; Sahn Nahm

doi:10.1016/j.matdes.2019.108400

Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta₂O₅ memristor

Hyun–Gyu –G Hwang, Jong–Un –U Woo, Tae–Ho –H Lee, Sung Mean Park, Tae–Gon –G Lee, Woong Hee Lee, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

An artificial synapse that can perform both learning and memory functions was realized using an amorphous Ta₂O₅ memristor. A Pt/Ta₂O₅/TiN memristor, with an amorphous Ta₂O₅ film grown at 100 °C, exhibited reliable bipolar switching properties at the various conductance states required for artificial synapse applications; in addition, it exhibited the transmission properties of physiological synapses. Various other synaptic properties were also obtained from the Ta₂O₅ memristor by modulating the input bias. The metaplasticity of a physiological synapse, which is a preliminary-spike-enhanced synaptic function, was also emulated in the Ta₂O₅ memristor via the metaplasticity of potentiation/depression and spike-timing-dependent plasticity. The synaptic plasticity and metaplasticity of the Ta₂O₅ memristor can be understood via the construction and destruction of oxygen vacancy filaments in the memristor.

Original language	English
Article number	108400
Journal	Materials and Design
Volume	187
DOIs	https://doi.org/10.1016/j.matdes.2019.108400
Publication status	Published - 2020 Feb

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. All data generated or analyzed during this study are included in this published article and its supplementary material files.

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2019 The Authors

Keywords

Amorphous TaO films
Artificial synapse
Memristor
Metaplasticity
Neuromorphic device
Synaptic plasticity

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matdes.2019.108400

Cite this

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title = "Synaptic plasticity and preliminary-spike-enhanced plasticity in a CMOS-compatible Ta2O5 memristor",

abstract = "An artificial synapse that can perform both learning and memory functions was realized using an amorphous Ta2O5 memristor. A Pt/Ta2O5/TiN memristor, with an amorphous Ta2O5 film grown at 100 °C, exhibited reliable bipolar switching properties at the various conductance states required for artificial synapse applications; in addition, it exhibited the transmission properties of physiological synapses. Various other synaptic properties were also obtained from the Ta2O5 memristor by modulating the input bias. The metaplasticity of a physiological synapse, which is a preliminary-spike-enhanced synaptic function, was also emulated in the Ta2O5 memristor via the metaplasticity of potentiation/depression and spike-timing-dependent plasticity. The synaptic plasticity and metaplasticity of the Ta2O5 memristor can be understood via the construction and destruction of oxygen vacancy filaments in the memristor.",

keywords = "Amorphous TaO films, Artificial synapse, Memristor, Metaplasticity, Neuromorphic device, Synaptic plasticity",

author = "Hwang, {Hyun–Gyu –G} and Woo, {Jong–Un –U} and Lee, {Tae–Ho –H} and Park, {Sung Mean} and Lee, {Tae–Gon –G} and Lee, {Woong Hee} and Sahn Nahm",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. All data generated or analyzed during this study are included in this published article and its supplementary material files. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2019 The Authors",

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AU - Park, Sung Mean

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AU - Nahm, Sahn

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